Mostrando 10 resultados de: 21
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2017 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2017(2)
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(2)
Electronics (Switzerland)(2)
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2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings(1)
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Física aplicada(14)
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scopus(21)
Hardware implementation of a shape recognition algorithm based on invariant moments
Conference ObjectAbstract: The present work shows the description of a simple fast shape detection algorithm and its implementaPalabras claves:Digital image, Finite state machine, Fpga, Hu's moments, Image moments, Non-local means filter, Shape recognitionAutores:Juan Sebastian Romero, Luis Miguel Procel Moya, Raffaitin C.Fuentes:googlescopusHydrogen impurity in SrTiO<inf>3</inf>: Structure, electronic properties and migration
ArticleAbstract: The present paper reports a computational investigation of the geometry and electronic structure asPalabras claves:Autores:Barreto R., Luis Miguel Procel Moya, Luis Villamagua, Stashans A.Fuentes:googlescopusEnergy efficient self-adaptive dual mode logic address decoder
ArticleAbstract: This paper presents a 1024-bit self-adaptive memory address decoder based on Dual Mode Logic (DML) dPalabras claves:Address decoder, Controller, Dual mode logic, Self-adaptiveAutores:Ariana Musello, Cristhopher Mosquera, Esteban Garzón, Kevin Vicuña, Luis Miguel Procel Moya, Mateo Rendón, Ramiro Taco, Sara Benedictis, Trojman L.Fuentes:googlescopusEnergy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells
Conference ObjectAbstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at tPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltageAutores:Ariana Musello, Luis Miguel Procel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.Fuentes:googlescopusFrom 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
ArticleAbstract: In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are dPalabras claves:32 nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:Eduardo Ortiz-Holguin, Luis Miguel Procel Moya, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusDC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive randomPalabras claves:Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Procel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusDMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems
Conference ObjectAbstract: This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), expPalabras claves:Double-barrier magnetic tunnel junction, energy-efficiency, Ternary content-addressable memoriesAutores:Kevin Vicuña, Luis Miguel Procel Moya, Ramiro Taco, Trojman L.Fuentes:googlescopusA Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopus