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Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
ArticleAbstract: Layered materials are an actively pursued area of research for realizing highly scaled technologiesPalabras claves:Mo, molecular beam epitaxy (MBE), TeAutores:Azcatl A., Furdyna J., Idrobo J.C., Jena D., Kim M., Leonardo Basile, Liu X., Lu N., Magno K., Rouvimov S., Vishwanath S., Wallace R., Xing H.Fuentes:googlescopusAlternating layer and island growth of Pb on Si by spontaneous quantum phase separation
ArticleAbstract: Studies of stability and growth of nanostructures and films have traditionally focused on the secondPalabras claves:Autores:Chen H., Chiang T.C., Chou M.Y., Holt M., Hong H., Leonardo Basile, Wei C.M., Wu Z.Fuentes:googlescopusImaging and spectroscopy of graphene/hexagonal boron nitride lateral heterostructure interfaces
Conference ObjectAbstract:Palabras claves:Autores:Gu G., Idrobo J.C., Leonardo Basile, Liu L.Fuentes:googlescopusLow-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations
ArticleAbstract: The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determiPalabras claves:first-principles calculations, low-frequency Raman spectroscopy, stacking configurations, Transition metal dichalcogenides, two-dimensional materialsAutores:Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Liang L., Mahjouri-Samani M., Meunier V., Puretzky A.A., Sumpter B.G., Wang K., Xiao K.Fuentes:googlescopusPatterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors
ArticleAbstract: The formation of semiconductor heterojunctions and their high-density integration are foundations ofPalabras claves:Autores:Boulesbaa A., Geohegan D.B., Ivanov I.N., Lee J., Leonardo Basile, Lin M.W., Lupini A.R., Mahjouri-Samani M., Puretzky A.A., Rouleau C.M., Wang K., Xiao K., Yoon M.Fuentes:googlescopusPersistent photoconductivity in two-dimensional Mo<inf>1-x</inf>W<inf>x</inf>Se<inf>2</inf>-MoSe<inf>2</inf> van der Waals heterojunctions
ArticleAbstract: Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers oPalabras claves:crystal, Optoelectronic, photoconductivityAutores:Geohegan D.B., Idrobo J.C., Leonardo Basile, Li X., Lin M.W., Puretzky A.A., Rouleau C.M., Wang K., Xiao K.Fuentes:scopusVan der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene
ArticleAbstract: Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially structured maPalabras claves:Chemical vapor deposition, GaSe, Graphene, heterostructures, van der Waals epitaxyAutores:Chi M., Geohegan D.B., Huang B., Idrobo J.C., Lee J., Leonardo Basile, Li X., Lin M.W., Ma C., Puretzky A.A., Rouleau C.M., Sumpter B.G., Vlassiouk I.V., Xiao K., Yoon M.Fuentes:googlescopusX-ray studies of the growth of smooth Ag films on Ge(111)-c(2×8)
ArticleAbstract: The growth and morphology of Ag films prepared by low temperature deposition onto Ge(111) were studiPalabras claves:Autores:Chiang T.C., Czoschke P., Hong H., Leonardo BasileFuentes:googlescopus