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IEEE MTT-S International Microwave Symposium Digest(1)
IEEE Transactions on Electron Devices(1)
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Ingeniería electrónica(2)
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scopus(2)
Measurement of mobility in HEMT devices using high-order derivatives
ArticleAbstract: In this paper, a novel approach to the measurement of mobility of GaAs HEMT devices is presented. ThPalabras claves:HEMTs, Intermodulation distortion, MESFETs, Microwave measurements, mobility, ModelingAutores:Fernández Ibáñez T., Guillermo Rafael-Valdivia, Mediavilla Sánchez A., Rodriguez-Tellez J., Tazón Puente A.Fuentes:scopusSingle function drain current model for MESFET/HEMT devices including pulsed dynamic behavior
Conference ObjectAbstract: A new approach to modeling the dynamic behavior of microwave devices based on pulsed measurements, iPalabras claves:Circuit modeling, FETs, Microwave devices, pulsed measurements, Scattering parametersAutores:Brady R., Brazil T.J., Guillermo Rafael-ValdiviaFuentes:scopus