Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication

Conference Object

Abstract: A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The tec

Palabras claves:

Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parameters

Autores:

Guillermo Rafael-Valdivia, Mendoza T., Su Z., Urquizo A.

Fuentes:

scopus