New technique for the implementation of nonlinear models for microwave transistors for broadband data communication

Conference Object

Abstract: A new way to implement nonlinear models for microwave transistors is shown. It allows conventional d

Palabras claves:

Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parameters

Autores:

Guillermo Rafael-Valdivia, Su Z.

Fuentes:

scopus