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Non-linear model for microwave transistors including low-frequency dispersion and memory effects
Conference ObjectAbstract: A new methodology for the extraction of nonlinear models for microwave transistors is proposed. A unPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, O. CastellanosFuentes:scopusLarge-signal FET modeling based on pulsed measurements
Conference ObjectAbstract: The new FET model presented in this paper highlights a method through which complex current flow dynPalabras claves:FETs, Intermodulation distortion, MESFETs, Nonlinear circuits, Power amplifiers, Scattering parametersAutores:Brady R., Brazil T.J., Guillermo Rafael-ValdiviaFuentes:scopusSingle function drain current model for MESFET/HEMT devices including pulsed dynamic behavior
Conference ObjectAbstract: A new approach to modeling the dynamic behavior of microwave devices based on pulsed measurements, iPalabras claves:Circuit modeling, FETs, Microwave devices, pulsed measurements, Scattering parametersAutores:Brady R., Brazil T.J., Guillermo Rafael-ValdiviaFuentes:scopus