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Gain-Cell Embedded DRAM under Cryogenic Operation-A First Study
ArticleAbstract: Operating circuits under cryogenic conditions is effective for a large spectrum of applications. HowPalabras claves:Cryogenic, data retention time (DRT), edge-direct tunneling, Embedded memory, gain-cell embedded DRAM (GC-eDRAM), subthreshold leakageAutores:Esteban Garzón, Greenblatt Y., Harel O., Marco Lanuzza, Teman A.Fuentes:scopusExploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications
ArticleAbstract: This paper evaluates the potential of spin-transfer torque magnetic random-access memories (STT-MRAMPalabras claves:77 K, cache memory, cold computing, Cryogenic, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopusField-Free Magnetic Tunnel Junction for Logic Operations Based on Voltage-Controlled Magnetic Anisotropy
ArticleAbstract: This letter demonstrates how to perform logic operations on the data stored in magnetic tunnel junctPalabras claves:logic operation, magnetic tunnel junction, micromagnetism, Spin electronicsAutores:Carpentieri M., Cutugno F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D.Fuentes:scopusEnergy efficient self-adaptive dual mode logic address decoder
ArticleAbstract: This paper presents a 1024-bit self-adaptive memory address decoder based on Dual Mode Logic (DML) dPalabras claves:Address decoder, Controller, Dual mode logic, Self-adaptiveAutores:Ariana Musello, Cristhopher Mosquera, Esteban Garzón, Kevin Vicuña, Luis Miguel Prócel Moya, Mateo Rendón, Ramiro Taco, Sara Benedictis, Trojman L.Fuentes:googlescopusUltralow voltage finFET-versus TFET-based STT-MRAM cells for iot applications
ArticleAbstract: Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic tunnel juncPalabras claves:double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Tunnel-FET (TFET), Ultralow voltageAutores:Esteban Garzón, Marco Lanuzza, Ramiro Taco, Strangio S.Fuentes:scopusSimulation Analysis of DMTJ-Based STT-MRAM Operating at Cryogenic Temperatures
ArticleAbstract: This article investigates spin-transfer torque magnetic random access memories (STT-MRAMs) based onPalabras claves:77 K, compact model, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), spin-transfer torque magnetic random access memory (STT-MRAM)Autores:Carpentieri M., Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopusQuantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model
ArticleAbstract: Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductoPalabras claves:2d materials, Armchair graphene nanoribbon field effect transistor (AGNRFET), Graphene, High-k dielectric, Low Power, Quantum capacitance, Tunnel FETsAutores:Avnon A., Esteban Garzón, Golman R., Marco Lanuzza, Ngo H.D., Teman A.Fuentes:scopusRelaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM
ArticleAbstract: Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as a premiere candidatePalabras claves:77 K, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopus