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2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
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Latin American Electron Devices Conference, LAEDC 2019(1)
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A phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusResistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters
Conference ObjectAbstract: In this work, a model for the resistive switching of ReRAM devices that considers the electrical sigPalabras claves:1T1R, active region, HRS, INTRINSIC, LRS, Model, RERAM, reset, resistive switching, series resistance, set, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusMagnetic properties of SrTiO<inf>3</inf>/Pr<inf>2/3</inf>Ca <inf>1/3</inf>MnO<inf>3</inf> multilayers
Conference ObjectAbstract: Nanoscale ferromagnetic (FM) clusters embedded within insulating (I) layers of the antiferromagneticPalabras claves:Autores:Dario Niebieskikwiat, Guimpel J., Haberkorn N., Silvana GuitarraFuentes:googlescopusModel for resistive switching in bipolar Hafnium-based memories
Conference ObjectAbstract: A new simple model for set-reset operation in resistive random access memories (ReRAM) is presented.Palabras claves:Autores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic multiscale model for HfO<inf>2</inf>-based resistive random access memories with 1T1R configuration
ArticleAbstract: In this paper, we propose a stochastic model for the resistive switching of ReRAM devices with 1T1RPalabras claves:1T1R configuration, HfO -based memory 2, Intrinsic parameters, Resistive random access memory (ReRAM), stochastic model, Switching probabilityAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStudy of the scaling and the temperature for RERAM cells using the QPC model
ArticleAbstract: This article describes the OXRAM cell operation for different areas and temperatures using the QuantPalabras claves:area scaling, HfO2, high-κ, QPC model, RERAM, TEMPERATURE, TinAutores:Laurent Raymond, Luis Miguel Procel Moya, Silvana Guitarra, Trojman L.Fuentes:googlescopus