Mostrando 2 resultados de: 2
Subtipo de publicación
Conference Object(2)
Publisher
2019 IEEE 4th Ecuador Technical Chapters Meeting, ETCM 2019(1)
Proceedings - 32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019(1)
Área de conocimiento
Ingeniería electrónica(2)
Arquitectura de computadoras(1)
Fabricación de dispositivos semiconductores(1)
Año de Publicación
2019(2)
New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies
Conference ObjectAbstract: The purpose of this work is to point out the main differences between a Static Random-Access MemoryPalabras claves:FinFET, Low voltage, SRAM memory, stability analysis, Static Noise Margins, Tunnel-FETAutores:Adriana Arevalo, Daniel Romero, Liautard R., Luis Miguel Prócel Moya, Trojman L.Fuentes:scopusTFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range
Conference ObjectAbstract: This work proposes and compares Static Random-Access Memory (SRAM) cells using hybrid technology forPalabras claves:CMOS, DELAY, FinFET, hybrid, Power consumption, SRAM, Static Noise Margin, TFET, Write Noise MarginAutores:Adriana Arevalo, Liautard R., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopus