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Subtipo de publicación
Conference Object(2)
Publisher
2019 IEEE 4th Ecuador Technical Chapters Meeting, ETCM 2019(1)
Proceedings - 32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019(1)
Año de Publicación
2019(2)
New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies
Conference ObjectAbstract: The purpose of this work is to point out the main differences between a Static Random-Access MemoryPalabras claves:FinFET, Low voltage, SRAM memory, stability analysis, Static Noise Margins, Tunnel-FETAutores:Adriana Arevalo, Daniel Romero, Liautard R., Luis Miguel Prócel Moya, Trojman L.Fuentes:scopusTFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range
Conference ObjectAbstract: This work proposes and compares Static Random-Access Memory (SRAM) cells using hybrid technology forPalabras claves:CMOS, DELAY, FinFET, hybrid, Power consumption, SRAM, Static Noise Margin, TFET, Write Noise MarginAutores:Adriana Arevalo, Liautard R., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopus