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scopus(34)
Characterization of lead zirconate titanate (53/47) films fabricated by a simplified sol-gel acetic-acid route
ArticleAbstract: Lead zirconate titanate [PZT (53/47)] films (around 200 nm thick) were prepared by the sol-gel acetiPalabras claves:Autores:Espinoza-Beltran F.J., Herrera-Gomez A., K. M. Moya-Canul, López Beltrán A.M., Martin Yañez-Limon, Mayén-Mondragón R., Vazquez-Lepe M.Fuentes:scopusA non-destructive method for determination of thermal conductivity of YSZ coatings deposited on Si substrates
ArticleAbstract: Thermal diffusivity (α) of YSZ coatings was determined by the phase lag method of the photo-acousticPalabras claves:Non-destructive evaluation, structural properties, Thermal Barrier Coatings, thermal conductivity, Thermal diffusivityAutores:Amaya C., Caicedo J.C., Gómez M.E., Martin Yañez-Limon, Prieto P., Vargas R., Zambrano G.Fuentes:scopusDielectric constant measurement using atomic force microscopy of dielectric films: a system theory approach
ArticleAbstract: A technique was developed to measure dielectric constant at microscale based on the system theory apPalabras claves:Autores:Arciniega J.J.G., Cruz-Valeriano E., Davila S.M., Enríquez-Flores C.I., Escamilla-Díaz T., Gutiérrez-Peralta A.M., Guzmán-Caballero D.E., Martin Yañez-Limon, Murillo-Bracamontes E.A., Palmerin J.M., Ramírez-Bon R., Torres-Ochoa J.A.Fuentes:scopusContact resonance frequencies and their harmonics in scanning probe microscopy
ArticleAbstract: Local characterizations of electric, magnetic, mechanical, electrochemical, and structural propertiePalabras claves:Autores:Cruz M.P., Cruz-Valeriano E., Enríquez-Flores C.I., Gervacio-Arciniega J.J., Martin Yañez-Limon, Murillo-Bracamontes E.A., Palomino-Ovando M.A., Siqueiros J.M.Fuentes:scopusControl system development for a raman spectrometer using microcontroller technology
ArticleAbstract: An electronic control system has been developed for a Raman spectrometer by using electronics basedPalabras claves:Microcontroller control, Photomultiplier, Raman spectroscopyAutores:Farías R.F., Gimenez A.J., Martin Yañez-LimonFuentes:scopusFree carrier absorption in the Ge:Sb:Te system
ArticleAbstract: Absorption in the infrared region in the Ge:Sb:Te system has been observed in films having stoichiomPalabras claves:A. disordered systems, D. Optical properties, D. phase transitions, E. light absorption and reflectionAutores:Chao B.B., González-Hernandez J., López-Cruz E., Martin Yañez-Limon, Ovshinsky S.R., Strand D.Fuentes:scopusFerroelectric hysteresis and improved fatigue of PZT (53/47) films fabricated by a simplified sol–gel acetic-acid route
ArticleAbstract: Double-layer Pb(Zr0.53Ti0.47)O3 films were fabricated by spin coating of a sol–gel acetic-acid-basedPalabras claves:Autores:Calderón-Piñar F., Espinoza-Beltran F.J., Flores-Ruiz F.J., León-Sarabia E., Martin Yañez-Limon, Mayén-Mondragón R., Rodríguez-Aranda M.C.Fuentes:scopusFollowing the integration of diamond particles on the lapping-plate surface: Towards a more efficient charging process
ArticleAbstract: Even when the charging of lapping plates can extensively influence their subsequent finishing perforPalabras claves:atomic force microscopy, diamond charging process, image analysis, Lapping plate topography, Raman spectroscopyAutores:Coronado F., Espinoza-Beltrn F., Herrera-Gomez A., Martin Yañez-Limon, Mayén-Mondragón R., Mũoz-Saldãa J., Ramrez-Bon R., Vargas-Ortz R.Fuentes:scopusElectrical characteristics of lead-free Mn-doped BiFeO<inf>3</inf>–SrTiO<inf>3</inf> thin films deposited on silicon substrate using pulsed laser deposition
ArticleAbstract: Lead-free 0.4(BiFe0.995Mn0.005O3)–0.6(SrTiO3) thin films were deposited on boron-doped silicon (p-SiPalabras claves:Autores:Castillo S.J., Martin Yañez-Limon, Olguín D., Quevedo-Lopez M., Rodriguez-Davila R.A., Serralta-Macías J.J., Young C.D.Fuentes:scopusElectronic paper from facile, two-step deposition of CuS
ArticleAbstract: A method is proposed to impregnate regular cellulosic paper with semi-conductive particles of copperPalabras claves:CELLULOSE, Copper sulfide, CuS, Paper electronics, SEMICONDUCTORAutores:Esparza R., Gimenez A.J., Jiménez-Sandoval S., Luna-Barcenas G., Martin Yañez-Limon, Medellin-Rodriguez F.J.Fuentes:scopus