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2020 IEEE ANDESCON, ANDESCON 2020(2)
IEEE Latin America Transactions(1)
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Microelectronic Engineering(1)
Proceedings of the 2016 IEEE ANDESCON, ANDESCON 2016(1)
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Ciencias de la computación(7)
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Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework
ArticleAbstract: This paper deals with the technology scalability of spin-transfer torque magnetic RAMs (STT-MRAMs)baPalabras claves:Device-to-memory analysis, FinFET, Magnetic tunnel junction (MTJ), STT-MRAM, technology scalingAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusAssessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
ArticleAbstract: This paper explores non-volatile cache memories implemented by spin-transfer torque magnetic randomPalabras claves:cache memory, Device-to-system simulation framework, double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAMAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopus720p-HD Gray-scale and Color Images Shape Recognition System Implementation on an FPGA Platform with a 1080pFull-HD HDMI Interface using a Hu Moments Algorithm
Conference ObjectAbstract: The present work implements and adapts a fast shape recognition algorithm on the Xilinx VC707 VIRTEXPalabras claves:ADV7511, Fpga, Full-HD, Gray Scale, HDL, HDMI, IIC, RGB, Shape recognitionAutores:André Borja, Daniel Cárdenas, Felipe Toscano, Luis Miguel Prócel Moya, Ramiro Taco, Trojman L.Fuentes:scopusEffects of the technology scaling down to 28nm on Ultra-Low Voltage and Power OTA performance using TCAD simulations
Conference ObjectAbstract: In this paper, the effect on the performances of the technology scaling down to 28nm (bulk and planaPalabras claves:28nm, 90nm, Feed Forward rejection, OTA, PDK, Pseudo Differential Pair, TCAD simulation, Ultra-low power, Ultra-low voltageAutores:André Borja, Juan Orozco, Luis Miguel Prócel Moya, Mateo Bonilla, Mateo Valencia, Ramiro Taco, Trojman L.Fuentes:scopusRemote control of VNA and parameter analyzer for RFCV measurements using Python
Conference ObjectAbstract: This paper presents the development of capacitance measurement with RF signal (RFCV) for MOSFET. SucPalabras claves:IEEE 488.2, MOSFET, Network Analyzer, PYTHON, RFCV, SCPI, SMU, VNAAutores:Esteban Garzón, Fernando Sanchez, Luis Miguel Prócel Moya, Trojman L.Fuentes:scopusStochastic multiscale model for HfO<inf>2</inf>-based resistive random access memories with 1T1R configuration
ArticleAbstract: In this paper, we propose a stochastic model for the resistive switching of ReRAM devices with 1T1RPalabras claves:1T1R configuration, HfO -based memory 2, Intrinsic parameters, Resistive random access memory (ReRAM), stochastic model, Switching probabilityAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStudy of the scaling and the temperature for RERAM cells using the QPC model
ArticleAbstract: This article describes the OXRAM cell operation for different areas and temperatures using the QuantPalabras claves:area scaling, HfO2, high-κ, QPC model, RERAM, TEMPERATURE, TinAutores:Laurent Raymond, Luis Miguel Prócel Moya, Silvana Guitarra, Trojman L.Fuentes:googlescopus