Mostrando 3 resultados de: 3
A phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusCapacitance Extraction of 34-nm Metallurgical Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique
Conference ObjectAbstract: This paper presents the description and the results obtained with a new RFCV system written on pythoPalabras claves:Parameter Analyzer, PYTHON, RFCV, Source Measure Unit, Vector Network AnalyzerAutores:DIego R. Benalcázar, Esteban Garzón, Trojman L.Fuentes:scopusReliability in GaN-based devices for power applications
Conference ObjectAbstract: This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperaturePalabras claves:AlGaN/GaN SBD, breakdown voltage, de-trapping, GET, MOS-HEMT, PBTI, reliability, TDDB, TRAPPINGAutores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Iucolano F., Ronchi N., Trojman L.Fuentes:googlescopus