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IEEE Transactions on Nuclear Science(5)
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS(1)
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Evaluation of the sensitivity of a COTS 90-nm SRAM memory at low bias voltage
Conference ObjectAbstract: This paper presents an experimental study of the sensitivity to 14-MeV neutrons to low bias voltagePalabras claves:Cots, low-bias voltage, neutron tests, radiation hardness, reliability, Soft error, SRAMAutores:Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Velazco R.Fuentes:scopusEvidence of the robustness of a cots soft-error free SRAM to Neutron Radiation
ArticleAbstract: Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell desigPalabras claves:Cots, LPSRAM, MUSCA SEP3, neutron tests, radiation hardness, reliability, Soft error, SRAMAutores:Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mansour W., Palomar C., Rey S., Rosetto O., Velazco R.Fuentes:scopusSensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage
ArticleAbstract: This paper presents the characterization of the sensitivity to 14-MeV neutrons of a commercial off-tPalabras claves:Cots, low-bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memory (SRAM)Autores:Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Velazco R.Fuentes:scopusSingle events in a COTS soft-error free SRAM at low bias voltage induced by 15-MeV neutrons
ArticleAbstract: This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low PowePalabras claves:Cots, LPSRAM, neutron tests, radiation hardness, reliability, Soft error, SRAMAutores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Mecha H., Pablo F. Ramos, PABLO FRANCISCO RAMOS VARGAS, VANESSA CAROLINA VARGAS VALLEJO, Vanessa Vargas, Velazco R.Fuentes:googlescopusSEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons
ArticleAbstract: This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltagePalabras claves:Commercial off-the-shelf (COTS), low bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memories (SRAM)Autores:Baylac M., Clemente J.A., Fraire J., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopusStatistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs
ArticleAbstract: Recently, the occurrence of multiple events in static tests has been investigated by checking the stPalabras claves:Multiple cell upsets, neutron tests, Single Event Upsets, SRAMsAutores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopus