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IEEE Transactions on Nuclear Science(4)
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS(1)
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scopus(5)
Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage
ArticleAbstract: This paper presents the characterization of the sensitivity to 14-MeV neutrons of a commercial off-tPalabras claves:Cots, low-bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memory (SRAM)Autores:Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Velazco R.Fuentes:scopusSEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons
ArticleAbstract: This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltagePalabras claves:Commercial off-the-shelf (COTS), low bias voltage, neutron tests, radiation hardness, reliability, Soft error, static random access memories (SRAM)Autores:Baylac M., Clemente J.A., Fraire J., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopusSome properties of only-SBUs scenarios in SRAMs applied to the detection of MCUs
Conference ObjectAbstract: Statistical properties of experiments in SRAMs with only SBUs are mathematically evaluated. StrategiPalabras claves:Multiple cell upsets, single bit upsets, single events, soft errors, SRAMsAutores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopusStatistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs
ArticleAbstract: Recently, the occurrence of multiple events in static tests has been investigated by checking the stPalabras claves:Multiple cell upsets, neutron tests, Single Event Upsets, SRAMsAutores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopusStatistical Deviations from the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs
ArticleAbstract: This paper addresses a well-known problem that occurs when memories are exposed to radiation: the dePalabras claves:Multiple cell upsets (MCUs), single bit upsets (SBUs), single events, soft errors, static random access memories (SRAMs)Autores:Agapito J.A., Baylac M., Clemente J.A., Francesca Villa, Franco F.J., Hubert G., Mecha H., Puchner H., Rey S., Velazco R.Fuentes:scopus