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Effect of pressure on the Raman anomaly of zinc-blende CuBr and Raman spectra of high-pressure phases
ArticleAbstract: Raman spectra of isotopically pure CuBr (63Cu81Br) were measured under hydrostatic pressures up to 1Palabras claves:Autores:Cardona M., Jorge Serrano, Lin C.T., Loa I., Manjón F.J., Syassen K.Fuentes:scopusEffect of pressure on the Raman scattering of wurtzite AlN
Conference ObjectAbstract: High-pressure Raman spectra of wurtzite aluminum nitride were measured up to 25 GPa. The Raman-activPalabras claves:Autores:Errandonea D., Garro N., Jorge Serrano, Kuball M., Manjón F.J., Romero A.H.Fuentes:scopusEffect of pressure on the anomalous Raman spectrum of CuBr
ArticleAbstract: Raman spectra of isotopically pure zinc-blende CuBr (63Cu81Br) were measured at T = 10 K under hydroPalabras claves:Autores:Cardona M., Jorge Serrano, Lin C.T., Loa I., Manjón F.J., Syassen K.Fuentes:scopusDispersive phonon linewidths: The E<inf>2</inf> phonons of ZnO
ArticleAbstract: Raman measurements of the E2high phonons of ZnO with several isotopic compositions at 7K and at 300KPalabras claves:Autores:Cardona M., Jorge Serrano, Lauck R., Manjón F.J., Romero A.H., Widulle F.Fuentes:scopusInN thin film lattice dynamics by grazing incidence inelastic X-ray scattering
ArticleAbstract: Achieving comprehensive information on thin film lattice dynamics so far has eluded well establishedPalabras claves:Autores:Bosak A., Garro N., Jorge Serrano, Krisch M., Kuball M., Manjón F.J., Romero A.H., Wang X., Yoshikawa A.Fuentes:scopusPerformance of graphene oxide-modified electrodeposited ZnO/Cu<inf>2</inf>O heterojunction solar cells
ArticleAbstract: We report the fabrication of ZnO/Cu2O heterojunction solar cells by means of the electrodeposition tPalabras claves:Cu O 2, electrochemical deposition, solar cells, znoAutores:Cembrero J., Manjón F.J., Nelly M. Rosas-Laverde, Orozco-Messana J., Pruna A.I.Fuentes:scopusPhonon dispersion relations of zinc oxide: Inelastic neutron scattering and ab initio calculations
ArticleAbstract: Zinc oxide is a key material for optoelectronic applications, whose transport properties are typicalPalabras claves:Autores:Bosak A., Cardona M., Ivanov A., Jorge Serrano, Krisch M., Lauck R., Manjón F.J., Romero A.H.Fuentes:scopusLattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors
ArticleAbstract: Raman spectra of aluminum nitride (AlN) under pressure have been measured up to 25 GPa, i.e., beyondPalabras claves:Autores:Errandonea D., Garro N., Jorge Serrano, Kuball M., Manjón F.J., Romero A.H.Fuentes:scopusSilent Raman modes in zinc oxide and related nitrides
ArticleAbstract: Anomalous Raman modes have been reported in several recent papers dealing with doped- and undoped-ZnPalabras claves:Autores:Jorge Serrano, Manjón F.J., Marí B., Romero A.H.Fuentes:scopusPressure dependence of the lattice dynamics of ZnO: An ab initio approach
ArticleAbstract: We have performed first-principles calculations of the electronic structure of ZnO, and applied themPalabras claves:Autores:Cardona M., Jorge Serrano, Lauck R., Manjón F.J., Romero A.H., Rubio A.Fuentes:scopus