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IEEE International Reliability Physics Symposium Proceedings(1)
IEEE Transactions on Device and Materials Reliability(1)
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A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusOrigins and implications of increased channel hot carrier variability in nFinFETs
Conference ObjectAbstract: Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeplPalabras claves:Bias Temperature Instability (BTI), Channel Hot Carriers (CHC), FinFETs, Time-Dependent VariabilityAutores:Bina M., Bury E., Chiarella T., Cho M., Crupi F., De Keersgieter A., Franco J., Grasser T., Groeseneken G., Horiguchi N., Ji Z., Kaczer B., Luis Miguel Prócel Moya, Pitner G., Putcha V., Roussel P.J., Thean A., Trojman L., Tyaginov S., Weckx P., Wimmer Y.Fuentes:googlescopus