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Original shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling
ArticleAbstract: This work presents original nanowire transistor architectures leading to device performance improvemPalabras claves:Autores:Bescond M., Cavassilas N., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusTheoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors
ArticleAbstract: Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we coPalabras claves:Autores:Bescond M., Cavassilas N., Dib E., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopus