Mostrando 6 resultados de: 6
Publisher
Journal of Applied Physics(2)
18th International Workshop on Computational Electronics, IWCE 2015(1)
Applied Physics Letters(1)
Microelectronics Journal(1)
Technical Digest - International Electron Devices Meeting, IEDM(1)
Área de conocimiento
Ingeniería electrónica(3)
Ciencia de materiales(2)
Física(2)
Mecánica cuántica(2)
Simulación por computadora(2)
Objetivos de Desarrollo Sostenible
ODS 9: Industria, innovación e infraestructura(6)
ODS 8: Trabajo decente y crecimiento económico(5)
ODS 7: Energía asequible y no contaminante(1)
Origen
scopus(6)
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
ArticleAbstract: We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transPalabras claves:Doping impurity, Green's function, Nanowire transistors, Quantum transport, SimulationAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusOriginal shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling
ArticleAbstract: This work presents original nanowire transistor architectures leading to device performance improvemPalabras claves:Autores:Bescond M., Cavassilas N., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusThe impact of lead geometry and discrete doping on NWFET operation
Conference ObjectAbstract: This work investigates the influence of discrete dopant positions and lead geometry on the contact rPalabras claves:Dielectrics, Doping, Geometry, Impurities, Logic gates, Semiconductor process modeling, siliconAutores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusTheoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors
ArticleAbstract: Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we coPalabras claves:Autores:Bescond M., Cavassilas N., Dib E., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusTime-resolved quantum transport for optoelectronics
Conference ObjectAbstract: We investigate time-resolved energy currents in a molecular optoelectronic junction made of two donoPalabras claves:Autores:Beltako K., Bescond M., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopus