Mostrando 10 resultados de: 48
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IEEE Transactions on Electron Devices(6)
IEEE Transactions on Circuits and Systems II: Express Briefs(5)
Solid-State Electronics(5)
International Journal of Circuit Theory and Applications(4)
Microelectronic Engineering(3)
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Física aplicada(43)
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Characterization and Modeling of BTI in SiC MOSFETs
Conference ObjectAbstract: SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hystPalabras claves:Autores:Consentino G., Cornigli D., Crupi F., Fiegna C., Reggiani S., Sánchez Luis, Sangiorgi E., Tallarico A.N., Valdivieso C.Fuentes:scopusAssessment of 2D-FET Based Digital and Analog Circuits on Paper
ArticleAbstract: Two-dimensional (2D) materials represent an emerging technology for transistor electronics in view oPalabras claves:2d materials, Field-Effect Transistor (FET), Molybdenum disulfide (MoS ) 2, Paper electronics, Verilog-A modelAutores:Crupi F., Iannaccone G., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusAssessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits
ArticleAbstract: In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-Transistor (TFET) virtual techPalabras claves:full-Adder, III-V, tunnel field effect transistor (TFET), very large scale integration (VLSI).Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusAssessment of paper-based MoS<inf>2</inf> FET for Physically Unclonable Functions
ArticleAbstract: Two-dimensional (2D) materials are recognized as a promising beyond-CMOS technology thanks to theirPalabras claves:2d materials, Hardware security, Molybdenum disulfide (MoS ) 2, Paper electronics, physically unclonable function (PUF), Verilog-A modelAutores:Conti S., Crupi F., Iannaccone G., Magnone P., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusBenchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
ArticleAbstract: In this work, a benchmark for low-power digital applications of a III-V TFET technology platform agaPalabras claves:Full adders, III-V, Ripple carry adders, TFETAutores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusAn energy aware variation-tolerant writing termination control for STT-based non volatile flip-flops
Conference ObjectAbstract: In this paper, we propose a variation-tolerant design methodology to embed self-write termination coPalabras claves:digital circuits, Energy efficiency, Non-volatile flip-flop, STT-MRAM, VLSI, Zero-leakage circuitsAutores:Alioto M., Crupi F., Marco Lanuzza, Rose R.D.Fuentes:scopusA 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS
ArticleAbstract: In this brief, we present a fully-integrated ring-oscillator based CMOS temperature sensor for InterPalabras claves:CMOS-based temperature sensor, Low-power, Low-voltage, Real-time sensing, Ring oscillatorAutores:Benjamin Zambrano, Crupi F., Esteban Garzón, Marco Lanuzza, Strangio S.Fuentes:scopusA 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm<sup>2</sup> Area in 180nm
Conference ObjectAbstract: This work introduces a compact voltage reference operating at pW-power and 250-mV supply (e.g., direPalabras claves:Autores:Alioto M., Crupi F., Fassio L., Lin L., Marco Lanuzza, Rose R.D.Fuentes:scopusA 0.6-to-1.8V CMOS Current Reference with Near-100% Power Utilization
ArticleAbstract: In this brief, a current reference is proposed to introduce the new capability of operating under wiPalabras claves:area-efficient, Current reference, internet of things, Low Power, Low voltage, Sensor nodesAutores:Alioto M., Crupi F., Fassio L., Lin L., Marco Lanuzza, Rose R.D.Fuentes:scopusA 3.2-pW, 0.2-V Trimming-Less Voltage Reference with 1.4-mV Across-Wafer Total Accuracy
Conference ObjectAbstract: This work introduces a class of voltage references able to operate down to 3.2 pW and 0.2-V supply fPalabras claves:corner-aware, energy harvesting, Ultra-low voltage, Voltage referenceAutores:Alioto M., Crupi F., Fassio L., Lin L., Marco Lanuzza, Rose R.D.Fuentes:scopus