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A Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC bPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusA tool to support harbor terminals design
Conference ObjectAbstract: Flows management is a crucial aspect in harbor terminals and entails several issues such as high floPalabras claves:Container terminal design, decision support system, Scenarios analysis, SimulationAutores:Bruzzone A., Chiurco A., Crupi F., Curinga M.C., Emanuele A.L., Longo F., Marco Lanuzza, Molinaro J.Fuentes:scopusGate-level body biasing for subthreshold logic circuits: Analytical modeling and design guidelines
ArticleAbstract: Gate-level body biasing provides an attractive solution to increase speed and robustness against proPalabras claves:digital circuits, forward body biasing, subthreshold design, Ultra-low voltageAutores:Albano D., Crupi F., Marco Lanuzza, Ramiro TacoFuentes:scopusNumerical simulation of back contact-back junction solar cells with emitter double contact
Conference ObjectAbstract: This work presents a simulation study of Back Contact-Back Junction solar cells (BC-BJ) with emitterPalabras claves:BC-BJ, Double contact, Emitter, numerical simulation, Solar cellAutores:Cocorullo G., Crupi F., Guerra N., Maccaronio V., Marco Guevara, Paul Procel, Pierro S.Fuentes:scopusOrigins and implications of increased channel hot carrier variability in nFinFETs
Conference ObjectAbstract: Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeplPalabras claves:Bias Temperature Instability (BTI), Channel Hot Carriers (CHC), FinFETs, Time-Dependent VariabilityAutores:Bina M., Bury E., Chiarella T., Cho M., Crupi F., De Keersgieter A., Franco J., Grasser T., Groeseneken G., Horiguchi N., Ji Z., Kaczer B., Luis Miguel Prócel Moya, Pitner G., Putcha V., Roussel P.J., Thean A., Trojman L., Tyaginov S., Weckx P., Wimmer Y.Fuentes:googlescopusMixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain
ArticleAbstract: In this paper, we identify the level shifter (LS) for voltage up-conversion from the ultralow-voltagPalabras claves:Level shifter (LS), technology computer-Aided design (TCAD), tunnel FET (TFET).Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Strangio S.Fuentes:scopusUnderstanding the Optimization of the Emitter Coverage in BC-BJ Solar Cells
Conference ObjectAbstract: In this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study oPalabras claves:back contact, back junction, BC-BJ, solar cells, TCADAutores:Cocorullo G., Crupi F., Guerra N., Maccaronio V., Marco Guevara, Paul ProcelFuentes:googlescopus