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Journal of Computational Electronics(2)
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings(1)
IEEE Transactions on Device and Materials Reliability(1)
IEEE Transactions on Electron Devices(1)
Proceedings of the 2016 IEEE ANDESCON, ANDESCON 2016(1)
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits
ArticleAbstract: In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-Transistor (TFET) virtual techPalabras claves:full-Adder, III-V, tunnel field effect transistor (TFET), very large scale integration (VLSI).Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Selmi L., Strangio S.Fuentes:scopusA Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusDesign guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells
ArticleAbstract: This work presents a study on back contact-back junction solar cells when using a metallization schePalabras claves:BC-BJ solar cells, Metallization, Photovoltaics, TCAD simulationAutores:Crupi F., Guerra N., Marco Guevara, Marco Lanuzza, Paul Procel, Rose R.D.Fuentes:scopusEarly assessment of tunnel-FET for energy-efficient logic circuits
Conference ObjectAbstract: In this paper, we explore the potentialities of TFET-based circuits operating in the ultra-low voltaPalabras claves:Autores:Crupi F., Esseni D., Marco Lanuzza, Palestri P., Strangio S.Fuentes:scopusNumerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell
ArticleAbstract: This work presents a study based on electro-optical numerical simulations of the impact of geometricPalabras claves:Numerical modeling, Recombination analysis, Silicon solar cells, TCAD simulationsAutores:Cocorullo G., Crupi F., Fiegna C., Maccaronio V., Magnone P., Paul Procel, Zanuccoli M.Fuentes:scopusTemperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect-Centric perspective
Conference ObjectAbstract: In this work, we present an analysis to separate the interface states generation from the oxide trapPalabras claves:channel hot carrier degradation, defect centrict framework, interface states, Oxide trapsAutores:Crupi F., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopus