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Effect of pressure on the anomalous Raman spectrum of CuBr
ArticleAbstract: Raman spectra of isotopically pure zinc-blende CuBr (63Cu81Br) were measured at T = 10 K under hydroPalabras claves:Autores:Cardona M., Jorge Serrano, Lin C.T., Loa I., Manjón F.J., Syassen K.Fuentes:scopusDisorder-induced phonon self-energy of semiconductors with binary isotopic composition
ArticleAbstract: Self-energy effects of Raman phonons in isotopically disordered semiconductors are deduced by perturPalabras claves:Autores:Cardona M., Jorge Serrano, Widulle F.Fuentes:scopusDispersive phonon linewidths: The E<inf>2</inf> phonons of ZnO
ArticleAbstract: Raman measurements of the E2high phonons of ZnO with several isotopic compositions at 7K and at 300KPalabras claves:Autores:Cardona M., Jorge Serrano, Lauck R., Manjón F.J., Romero A.H., Widulle F.Fuentes:scopusHeat capacity of PbS: Isotope effects
ArticleAbstract: In recent years, the availability of highly pure stable isotopes has made possible the investigationPalabras claves:Autores:Cardona M., Jorge Serrano, Kremer R.K., Lauck R., Romero A.H., Siegle G.Fuentes:scopusElectron-phonon renormalization of the absorption edge of the cuprous halides
ArticleAbstract: We report the isotope effects of copper and bromine on the gap of CuBr, and that of copper on the gaPalabras claves:Autores:Cardona M., Fröhlich D., Jorge Serrano, Lin C.T., Reimann K., Schweitzer C.Fuentes:scopusPressure and temperature dependence of the Raman phonons in isotopic γ-CuI
ArticleAbstract: The transverse-optic (TO) phonons of zinc-blende-type CuCl (γ-CuCl) and the longitudinal-optic (LO)Palabras claves:Autores:Cardona M., Jorge Serrano, Lin C.T., Ritter T.M., Rubio A., Weinstein B.A.Fuentes:scopusPressure dependence of the lattice dynamics of ZnO: An ab initio approach
ArticleAbstract: We have performed first-principles calculations of the electronic structure of ZnO, and applied themPalabras claves:Autores:Cardona M., Jorge Serrano, Lauck R., Manjón F.J., Romero A.H., Rubio A.Fuentes:scopusLattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
Conference ObjectAbstract: We have measured the phonon dispersion relations in 4H-SiC by inelastic x-ray scattering (IXS) usingPalabras claves:4H Silicon Carbide, Inelastic X-ray scattering, Phonon Dispersion RelationsAutores:Cardona M., Choyke W.J., Jorge Serrano, Lorenzen M., Pavone P., Requardt H., Schwoerer-Böhning M., Stojetz B., Strempfer J.Fuentes:scopusLattice properties of PbX (X=S, Se, Te): Experimental studies and ab initio calculations including spin-orbit effects
ArticleAbstract: During the past five years the low-temperature heat capacity of simple semiconductors and insulatorsPalabras claves:Autores:Cardona M., Gonze X.C., Jorge Serrano, Kremer R.K., Lauck R., Romero A.H., Siegle G.Fuentes:scopusPhonon dispersion relations of zinc oxide: Inelastic neutron scattering and ab initio calculations
ArticleAbstract: Zinc oxide is a key material for optoelectronic applications, whose transport properties are typicalPalabras claves:Autores:Bosak A., Cardona M., Ivanov A., Jorge Serrano, Krisch M., Lauck R., Manjón F.J., Romero A.H.Fuentes:scopus