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scopus(6)
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusDynamical photo-induced electronic properties of molecular junctions
ArticleAbstract: Nanoscale molecular-electronic devices and machines are emerging as promising functional elements, nPalabras claves:Autores:Beltako K., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopusTheoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors
ArticleAbstract: Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we coPalabras claves:Autores:Bescond M., Cavassilas N., Dib E., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusThree-dimensional k p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
ArticleAbstract: We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This selPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusTime-resolved quantum transport for optoelectronics
Conference ObjectAbstract: We investigate time-resolved energy currents in a molecular optoelectronic junction made of two donoPalabras claves:Autores:Beltako K., Bescond M., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopus