Mostrando 7 resultados de: 7
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Publisher
2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(2)
2019 IEEE 4th Ecuador Technical Chapters Meeting, ETCM 2019(1)
ETCM 2021 - 5th Ecuador Technical Chapters Meeting(1)
Electronics (Switzerland)(1)
Latin American Electron Devices Conference, LAEDC 2019(1)
Área de conocimiento
Ingeniería electrónica(7)
Fabricación de dispositivos semiconductores(4)
Ciencia de materiales(2)
Energía(2)
Arquitectura de computadoras(1)
Energy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells
Conference ObjectAbstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at tPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltageAutores:Ariana Musello, Luis Miguel Procel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.Fuentes:googlescopusComparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters
Conference ObjectAbstract: The present work shows the comparison of planar CMOS, FinFET and Tunnel-FET technologies in the prinPalabras claves:energy harvester, FinFET, full-wave rectifier, planar CMOS, Tunnel-FETAutores:J. Paredes, Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusAssessment of 10 nm Tunnel-FETs and FinFETs transistors for ultra-low voltage and high-speed digital circuits
Conference ObjectAbstract: The trade-offs of the Tunnel-FETs (TFETs) in terms of delay, energy per cycle, and noise margin arePalabras claves:digital circuits, Energy-delay trade-off, FinFET, Tunnel-FET (TFET), Ultra-low voltageAutores:Christian Cao, Kevin Landázuri, Luis Miguel Procel Moya, Mateo Rendón, Ramiro Taco, Trojman L.Fuentes:scopusPerformance Benchmarking of TFET and FinFET Digital Circuits from a Synthesis-Based Perspective
ArticleAbstract: Miniaturization and portable devices have reshaped the electronic device landscape, emphasizing thePalabras claves:characterization, FinFET, MSP-430, Standard cell library, Synthesis, Tunnel-FET (TFET), Ultra-low voltageAutores:Christian Cao, Esteban Garzón, Kevin Landázuri, Luis Miguel Procel Moya, Mateo Rendón, Ramiro TacoFuentes:scopusNew Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies
Conference ObjectAbstract: The purpose of this work is to point out the main differences between a Static Random-Access MemoryPalabras claves:FinFET, Low voltage, SRAM memory, stability analysis, Static Noise Margins, Tunnel-FETAutores:Adriana Arevalo, Daniel Romero, Liautard R., Luis Miguel Procel Moya, Trojman L.Fuentes:scopusTFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range
Conference ObjectAbstract: This work proposes and compares Static Random-Access Memory (SRAM) cells using hybrid technology forPalabras claves:CMOS, DELAY, FinFET, hybrid, Power consumption, SRAM, Static Noise Margin, TFET, Write Noise MarginAutores:Adriana Arevalo, Liautard R., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusVoltage and Technology Scaling of DMTJ-based STT-MRAMs for Energy-Efficient Embedded Memories
Conference ObjectAbstract: This work presents energy advantages allowed by the technology and voltage scaling of spin-transferPalabras claves:double-barrier magnetic tunnel junction (DMTJ), Embedded memory, energy-efficient, FinFET, Low-voltage, STT-MRAMAutores:Esteban Garzón, Luis Miguel Procel Moya, Marco Lanuzza, Ramiro Taco, Trojman L.Fuentes:scopus