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Analysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy
Conference ObjectAbstract: A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-Palabras claves:conductive filament, filamentary conduction, RERAM, reset, stochastic model, Switching, two-step transitionAutores:Laurent Raymond, Martin Gavilanez, Silvana Guitarra, Trojman L.Fuentes:googlescopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusDisorder effects in the S=1 antiferromagnetic spin ladder CaV<inf>2</inf>O<inf>4</inf>
ArticleAbstract: We study the physical properties of the antiferromagnetic spin ladder CaV2O4 (CVO) and the Y-doped rPalabras claves:CaV O 2 4, Defect-induced magnetic moments, Disordered solids, exchange bias, Spin ladders, Variable-range hoppingAutores:Caneiro A., Dario Niebieskikwiat, Silvana GuitarraFuentes:scopusMagnetic properties of SrTiO<inf>3</inf>/Pr<inf>2/3</inf>Ca <inf>1/3</inf>MnO<inf>3</inf> multilayers
Conference ObjectAbstract: Nanoscale ferromagnetic (FM) clusters embedded within insulating (I) layers of the antiferromagneticPalabras claves:Autores:Dario Niebieskikwiat, Guimpel J., Haberkorn N., Silvana GuitarraFuentes:googlescopusModel for resistive switching in bipolar Hafnium-based memories
Conference ObjectAbstract: A new simple model for set-reset operation in resistive random access memories (ReRAM) is presented.Palabras claves:Autores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusWays to encourage women in Ecuador to pursue a career in physics
Conference ObjectAbstract: In Ecuador, as in many other Latin American countries, a considerable number of women are involved iPalabras claves:Autores:Mantilla C., Silvana GuitarraFuentes:googlescopusResistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters
Conference ObjectAbstract: In this work, a model for the resistive switching of ReRAM devices that considers the electrical sigPalabras claves:1T1R, active region, HRS, INTRINSIC, LRS, Model, RERAM, reset, resistive switching, series resistance, set, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic based compact model to pbkp_redict highly variable electrical characteristics of organic CBRAM devices
ArticleAbstract: A compact model is proposed using a stochastic approach to capture the resistive switching behaviorPalabras claves:Conductive-bridge random access (CBRAM), Polyethylene oxide (PEO), stochastic model, Switching probabilityAutores:Deleruyelle D., Laurent Raymond, Mahato P., Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic multiscale model for HfO<inf>2</inf>-based resistive random access memories with 1T1R configuration
ArticleAbstract: In this paper, we propose a stochastic model for the resistive switching of ReRAM devices with 1T1RPalabras claves:1T1R configuration, HfO -based memory 2, Intrinsic parameters, Resistive random access memory (ReRAM), stochastic model, Switching probabilityAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStudy of the scaling and the temperature for RERAM cells using the QPC model
ArticleAbstract: This article describes the OXRAM cell operation for different areas and temperatures using the QuantPalabras claves:area scaling, HfO2, high-κ, QPC model, RERAM, TEMPERATURE, TinAutores:Laurent Raymond, Luis Miguel Prócel Moya, Silvana Guitarra, Trojman L.Fuentes:googlescopus