Mostrando 10 resultados de: 23
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Publisher
European Physical Journal B(2)
Physical Review B - Condensed Matter and Materials Physics(2)
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
AIP Conference Proceedings(1)
Applied Physics Letters(1)
Área temáticas
Física aplicada(14)
Electricidad y electrónica(7)
Ingeniería y operaciones afines(7)
Ciencias de la computación(4)
Física(4)
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusDielectric resonances in three-dimensional binary disordered media
ArticleAbstract: Powdered solids often present very specific properties due to their granular nature. Such powders arPalabras claves:61.43.Gt Powders, porous materials, 66.10.Ed Ionic conduction, 66.30.Dn Theory of diffusion and ionic conduction in solidsAutores:Albinet G., Laurent RaymondFuentes:scopusDielectric resonances of ordered passive arrays
ArticleAbstract: The electrical and optical properties of ordered passive arrays, constituted of inductive and capaciPalabras claves:Autores:Albinet G., Laurent Raymond, Schäfer S.Fuentes:scopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusGap narrowing in charged and doped silicon nanoclusters
ArticleAbstract: The gap narrowing in charged Si35 H36 and n -type doped Si34 D H36 (D=P, As, Sb, S, Se, and Te) clusPalabras claves:Autores:Kulatov E., Laurent Raymond, Michelini F., Titov A., Uspenskii Y.A.Fuentes:scopusElectronic and magnetic properties of semiconducting nanoclusters and large organic molecules: Features interesting for spintronics
Conference ObjectAbstract: Spin properties of single-doped and single-electron charged nano-systems having an odd number of elePalabras claves:Metal phthalocyanine, Nanocluster, SpintronicAutores:Kulatov E., Laurent Raymond, Michelini F., Tikhonov E., Titov A., Uspenskii Y.A.Fuentes:scopusEvidence for impurity-induced polar state in Sr1-x Mnx TiO3 from density functional calculations
ArticleAbstract: We have performed density functional calculations for 40- and 90-atom supercells of SrTiO3 doped byPalabras claves:Autores:Hayn R., Kondakova I.V., Kuzian R.O., Laguta V.V., Laurent RaymondFuentes:scopusDynamical photo-induced electronic properties of molecular junctions
ArticleAbstract: Nanoscale molecular-electronic devices and machines are emerging as promising functional elements, nPalabras claves:Autores:Beltako K., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopusNumerical modelling of impedance spectra of ionic conductor-insulator core-shell composites
ArticleAbstract: Impedance spectra of ionic conductor-insulator core-shell composites are simulated in Cole-Cole andPalabras claves:Autores:Albinet G., Knauth P., Laugier J.M., Laurent RaymondFuentes:scopus