Mostrando 10 resultados de: 28
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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
ArticleAbstract: We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transPalabras claves:Doping impurity, Green's function, Nanowire transistors, Quantum transport, SimulationAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusAnalysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy
Conference ObjectAbstract: A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-Palabras claves:conductive filament, filamentary conduction, RERAM, reset, stochastic model, Switching, two-step transitionAutores:Laurent Raymond, Martin Gavilanez, Silvana Guitarra, Trojman L.Fuentes:googlescopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusArticle
ArticleAbstract: The kinetic roughening of growing epitaxial layers is investigated with a phenomenological stochastiPalabras claves:crystal growth, Nonlinear stochastic dynamics, Roughening transitionAutores:Laurent Raymond, Verga A., Vvedensky D.D.Fuentes:scopusDynamical photo-induced electronic properties of molecular junctions
ArticleAbstract: Nanoscale molecular-electronic devices and machines are emerging as promising functional elements, nPalabras claves:Autores:Beltako K., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopusDynamical spin Hall conductivity in a magnetic disordered system
ArticleAbstract: We investigate the intrinsic spin Hall effect in a quantum well semiconductor doped with magnetic imPalabras claves:Autores:Laurent Raymond, Van Den Berg T., Verga A.Fuentes:scopusDielectric resonances in disordered media
ArticleAbstract: Binary disordered systems are usually obtained by mixing two ingredients in variable proportions: coPalabras claves:Autores:Albinet G., Laugier J.M., Laurent Raymond, Schäfer S.Fuentes:scopusDielectric resonances in three-dimensional binary disordered media
ArticleAbstract: Powdered solids often present very specific properties due to their granular nature. Such powders arPalabras claves:61.43.Gt Powders, porous materials, 66.10.Ed Ionic conduction, 66.30.Dn Theory of diffusion and ionic conduction in solidsAutores:Albinet G., Laurent RaymondFuentes:scopusGap narrowing in charged and doped silicon nanoclusters
ArticleAbstract: The gap narrowing in charged Si35 H36 and n -type doped Si34 D H36 (D=P, As, Sb, S, Se, and Te) clusPalabras claves:Autores:Kulatov E., Laurent Raymond, Michelini F., Titov A., Uspenskii Y.A.Fuentes:scopus