Mostrando 10 resultados de: 27
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Physical Review B(4)
Journal of Applied Physics(3)
Physical Review B - Condensed Matter and Materials Physics(3)
Applied Physics Letters(2)
18th International Workshop on Computational Electronics, IWCE 2015(1)
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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
ArticleAbstract: We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transPalabras claves:Doping impurity, Green's function, Nanowire transistors, Quantum transport, SimulationAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusBallistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopusAnalysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy
Conference ObjectAbstract: A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-Palabras claves:conductive filament, filamentary conduction, RERAM, reset, stochastic model, Switching, two-step transitionAutores:Laurent Raymond, Martin Gavilanez, Silvana Guitarra, Trojman L.Fuentes:googlescopusAnomalous quantum Hall effect induced by disorder in topological insulators
ArticleAbstract: We investigate a transition between a two-dimensional topological insulator conduction state, characPalabras claves:Autores:Demion A., Laurent Raymond, Verga A.Fuentes:scopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusDynamical spin Hall conductivity in a magnetic disordered system
ArticleAbstract: We investigate the intrinsic spin Hall effect in a quantum well semiconductor doped with magnetic imPalabras claves:Autores:Laurent Raymond, Van Den Berg T., Verga A.Fuentes:scopusFinite frequency noise in a normal metal-topological superconductor junction
ArticleAbstract: A topological superconductor nanowire bears a Majorana bound state at each of its ends, leading to uPalabras claves:Autores:Bathellier D., Jonckheere T., Laurent Raymond, Martin T., Rech J., Zazunov A.Fuentes:scopusInfluence of ionized impurities in silicon nanowire MOS transistors
Conference ObjectAbstract: This study presents ionized impurity impacts on silicon nanowire MOS transistors. We first calculatePalabras claves:Green's function, Impurity, Modeling, Nanowire, Quantum transport, transistorAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusElectronic and magnetic properties of semiconducting nanoclusters and large organic molecules: Features interesting for spintronics
Conference ObjectAbstract: Spin properties of single-doped and single-electron charged nano-systems having an odd number of elePalabras claves:Metal phthalocyanine, Nanocluster, SpintronicAutores:Kulatov E., Laurent Raymond, Michelini F., Tikhonov E., Titov A., Uspenskii Y.A.Fuentes:scopus