Mostrando 10 resultados de: 24
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Solid-State Electronics(3)
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(2)
IEEE Transactions on Device and Materials Reliability(2)
IEEE Transactions on Electron Devices(2)
Latin American Electron Devices Conference, LAEDC 2019(2)
Área temáticas
Física aplicada(22)
Ciencias de la computación(3)
Electricidad y electrónica(3)
Magnetismo(2)
Bergsonismo e intuicionismo(1)
Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters
Conference ObjectAbstract: The present work shows the comparison of planar CMOS, FinFET and Tunnel-FET technologies in the prinPalabras claves:energy harvester, FinFET, full-wave rectifier, planar CMOS, Tunnel-FETAutores:J. Paredes, Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC bPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusAdjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
ArticleAbstract: This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnelPalabras claves:77 K, Cryogenic cache, Cryogenic electronics, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusExploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs
Conference ObjectAbstract: This paper explores performance and technology-scalability of STT-MRAMs exploiting double-barrier MTPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, technology-voltage scalingAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusFabrication of Nanopores Using the Controlled Dielectric Breakdown Technique
Conference ObjectAbstract: Controlled dielectric breakdown is becoming the main solid-state nanopore fabrication technique worlPalabras claves:ACC, controlled dielectric breakdown, DAQ, DNA RNA sensor, fluidic cell, leakage current, Silicon nitride, solid-state nanopores, transmembraneAutores:Amaguayo N., Ariana Musello, José A. Bustamante, Luis Miguel Prócel Moya, Pablo Lopez, Trojman L.Fuentes:scopusEnergy-Efficient FinFET-Versus TFET-Based STT-MRAM Bitcells
Conference ObjectAbstract: This paper explores STT-MRAM bitcells based on double-barrier magnetic tunnel junctions (DMTJs) at tPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, tunnel FET (TFET), Ultralow voltageAutores:Ariana Musello, Luis Miguel Prócel Moya, Marco Villegas, Ramiro Taco, Santiago S. Perez, Trojman L.Fuentes:googlescopusExperimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO<inf>2</inf>-based resistive random access memories
ArticleAbstract: The quantum point contact (QPC) model for dielectric breakdown is used to explain the electron transPalabras claves:Autores:Crupi F., Degraeve R., Goux L., J. Moreno, Luis Miguel Prócel Moya, Maccaronio V., Simoen E., Trojman L.Fuentes:scopus