Mostrando 10 resultados de: 24
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Solid-State Electronics(3)
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(2)
IEEE Transactions on Device and Materials Reliability(2)
IEEE Transactions on Electron Devices(2)
Latin American Electron Devices Conference, LAEDC 2019(2)
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Física aplicada(22)
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Electricidad y electrónica(3)
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A phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusAdjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
ArticleAbstract: This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnelPalabras claves:77 K, Cryogenic cache, Cryogenic electronics, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusExploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs
Conference ObjectAbstract: This paper explores performance and technology-scalability of STT-MRAMs exploiting double-barrier MTPalabras claves:double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAM, technology-voltage scalingAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric
Conference ObjectAbstract: The degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under on-statePalabras claves:de-trapping, GaN, interfacial layer, nitride, on-state, oxide, Schottky diode, trapping rateAutores:Bakeroot B., De Jaeger B., Decoutere S., Eliana Acurio, Trojman L.Fuentes:googlescopusInfluence of GaN- and Si <inf>3</inf> N <inf>4</inf> -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
ArticleAbstract: This paper analyses the influence of the GaN and Si 3 N 4 passivation (or 'cap') layer on the top ofPalabras claves:activation energy, AlGaN/GaN Schottky diode, breakdown voltage, GaN cap, off-state, passivation layer, reliability, Si N cap 3 4Autores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopusModel for resistive switching in bipolar Hafnium-based memories
Conference ObjectAbstract: A new simple model for set-reset operation in resistive random access memories (ReRAM) is presented.Palabras claves:Autores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusRelaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM
ArticleAbstract: Spin-transfer torque magnetic random-access memory (STT-MRAM) is considered as a premiere candidatePalabras claves:77 K, Cryogenic computing, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusReliability Assessment of AlGaN/GaN Schottky Barrier Diodes under ON-State Stress
ArticleAbstract: This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge TermiPalabras claves:AlGaN/GaN SBD, extrinsic, GET, INTRINSIC, lifetime, on-state, reliabilityAutores:Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Tatiana Moposita, Trojman L.Fuentes:scopusReliability Study on Diodes Based on AlGaN/GaN During the On State
ArticleAbstract: This work aims to study the degradation of Schottky Barrier Diodes (SBD) with a gated edge terminatiPalabras claves:AlGaN/GaN, diodes, INTRINSIC, reliability, Schottky barrierAutores:Bakeroot B., De Jaeger B., Eliana Acurio, Trojman L.Fuentes:googlescopus