Mostrando 10 resultados de: 34
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2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(3)
ETCM 2021 - 5th Ecuador Technical Chapters Meeting(3)
Electronics (Switzerland)(3)
2020 IEEE 11th Latin American Symposium on Circuits and Systems, LASCAS 2020(2)
2021 IEEE 12th Latin American Symposium on Circuits and Systems, LASCAS 2021(2)
Área temáticas
Física aplicada(28)
Ciencias de la computación(12)
Electricidad y electrónica(4)
Instrumentos de precisión y otros dispositivos(1)
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Ciencia de materiales(11)
Semiconductor(5)
Arquitectura de computadoras(3)
Ciencias de la computación(3)
Energía(3)
A 180 nm Low-Cost Operational Amplifier for IoT Applications
Conference ObjectAbstract: This paper presents the design and post-layout simulation of a two-stage operational amplifier (opamPalabras claves:0.18 μ m, cadence virtuoso, High-performance, internet of things (IoT), Low-cost, miller compensation, operational amplifier, post-layout simulation, stabilityAutores:Ariana Musello, Cristhopher Mosquera, Kevin Vicuña, Luis Miguel Procel Moya, Marco Lanuzza, Mateo Rendón, Ramiro Taco, Trojman L.Fuentes:scopusA Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusA low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks
ArticleAbstract: This paper presents a novel low-power low-voltage analog implementation of the softmax function, witPalabras claves:Activation functions, Deep Neural Networks, Machine learning, SoftmaxAutores:Crupi F., Marco Lanuzza, Strangio S., Tatiana Moposita, Trojman L., Vatalaro M., Vladimirescu A.Fuentes:scopusComparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters
Conference ObjectAbstract: The present work shows the comparison of planar CMOS, FinFET and Tunnel-FET technologies in the prinPalabras claves:energy harvester, FinFET, full-wave rectifier, planar CMOS, Tunnel-FETAutores:J. Paredes, Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusAssessment of 10 nm Tunnel-FETs and FinFETs transistors for ultra-low voltage and high-speed digital circuits
Conference ObjectAbstract: The trade-offs of the Tunnel-FETs (TFETs) in terms of delay, energy per cycle, and noise margin arePalabras claves:digital circuits, Energy-delay trade-off, FinFET, Tunnel-FET (TFET), Ultra-low voltageAutores:Christian Cao, Kevin Landázuri, Luis Miguel Procel Moya, Mateo Rendón, Ramiro Taco, Trojman L.Fuentes:scopusCapacitance Extraction of 34-nm Metallurgical Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique
Conference ObjectAbstract: This paper presents the description and the results obtained with a new RFCV system written on pythoPalabras claves:Parameter Analyzer, PYTHON, RFCV, Source Measure Unit, Vector Network AnalyzerAutores:DIego R. Benalcázar, Esteban Garzón, Trojman L.Fuentes:scopusDC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive randomPalabras claves:Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Procel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusDMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems
Conference ObjectAbstract: This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), expPalabras claves:Double-barrier magnetic tunnel junction, energy-efficiency, Ternary content-addressable memoriesAutores:Kevin Vicuña, Luis Miguel Procel Moya, Ramiro Taco, Trojman L.Fuentes:googlescopusEffects of the technology scaling down to 28nm on Ultra-Low Voltage and Power OTA performance using TCAD simulations
Conference ObjectAbstract: In this paper, the effect on the performances of the technology scaling down to 28nm (bulk and planaPalabras claves:28nm, 90nm, Feed Forward rejection, OTA, PDK, Pseudo Differential Pair, TCAD simulation, Ultra-low power, Ultra-low voltageAutores:André Borja, Juan Orozco, Luis Miguel Procel Moya, Mateo Bonilla, Mateo Valencia, Ramiro Taco, Trojman L.Fuentes:scopusEfficiency of Double-Barrier Magnetic Tunnel Junction-Based Digital eNVM Array for Neuro-Inspired Computing
ArticleAbstract: This brief deals with the impact of spin-transfer torque magnetic random access memory (STT-MRAM) cePalabras claves:double-barrier magnetic tunnel junction (DMTJ), energy-efficiency, MNIST dataset, multilayer perceptron (MPL), online classification, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Tatiana Moposita, Trojman L., Vladimirescu A.Fuentes:scopus