Mostrando 4 resultados de: 4
Filtros aplicados
Publisher
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
2022 IEEE Latin America Electron Devices Conference, LAEDC 2022(1)
IEEE Latin America Transactions(1)
Latin American Electron Devices Conference, LAEDC 2019(1)
Analysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy
Conference ObjectAbstract: A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-Palabras claves:conductive filament, filamentary conduction, RERAM, reset, stochastic model, Switching, two-step transitionAutores:Laurent Raymond, Martin Gavilanez, Silvana Guitarra, Trojman L.Fuentes:googlescopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusResistive Switching Model of OxRAM Devices Based on Intrinsic Electrical Parameters
Conference ObjectAbstract: In this work, a model for the resistive switching of ReRAM devices that considers the electrical sigPalabras claves:1T1R, active region, HRS, INTRINSIC, LRS, Model, RERAM, reset, resistive switching, series resistance, set, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStudy of the scaling and the temperature for RERAM cells using the QPC model
ArticleAbstract: This article describes the OXRAM cell operation for different areas and temperatures using the QuantPalabras claves:area scaling, HfO2, high-κ, QPC model, RERAM, TEMPERATURE, TinAutores:Laurent Raymond, Luis Miguel Prócel Moya, Silvana Guitarra, Trojman L.Fuentes:googlescopus