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2017 IEEE International Autumn Meeting on Power, Electronics and Computing, ROPEC 2017(2)
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2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022(2)
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scopus(31)
Comparison of Different Technologies for Transistor Rectifiers Circuits for Micropower Energy Harvesters
Conference ObjectAbstract: The present work shows the comparison of planar CMOS, FinFET and Tunnel-FET technologies in the prinPalabras claves:energy harvester, FinFET, full-wave rectifier, planar CMOS, Tunnel-FETAutores:J. Paredes, Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusAnalysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy
Conference ObjectAbstract: A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-Palabras claves:conductive filament, filamentary conduction, RERAM, reset, stochastic model, Switching, two-step transitionAutores:Laurent Raymond, Martin Gavilanez, Silvana Guitarra, Trojman L.Fuentes:googlescopusA Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC bPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusDC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive randomPalabras claves:Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Prócel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusDMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems
Conference ObjectAbstract: This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), expPalabras claves:Double-barrier magnetic tunnel junction, energy-efficiency, Ternary content-addressable memoriesAutores:Kevin Vicuña, Luis Miguel Prócel Moya, Ramiro Taco, Trojman L.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusDesign and optimization of a Vibrational MEMS-Based Energy Harvester
Conference ObjectAbstract: This paper describes the design of a Vibrational Energy Harvester (VEH) based on a microelectromechaPalabras claves:acceleration, MEMs, VEHAutores:Brenes A., Eduardo Ortiz-Holguin, Luis Miguel Prócel Moya, Trojman L., Vladimirescu A.Fuentes:googlescopusFrom 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits
ArticleAbstract: In this present work, different Cross-Coupled Differential Drive (CCDD) CMOS bridge rectifiers are dPalabras claves:32 nm, CCDD, Full wave rectifier, Multiplier, PCE, TFET, VCEAutores:Eduardo Ortiz-Holguin, Luis Miguel Prócel Moya, Marco Villegas, Ramiro Taco, Trojman L.Fuentes:googlescopus