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A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO <inf>2</inf> -based Resistive RPalabras claves:active region, model, percolation, RERAM, resistive switching, simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices
ArticleAbstract: A compact model is proposed using a stochastic approach to capture the resistive switching behaviorPalabras claves:Conductive-bridge random access (CBRAM), Polyethylene oxide (PEO), stochastic model, Switching probabilityAutores:Deleruyelle D., Laurent Raymond, Mahato P., Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration
ArticleAbstract: In this paper, we propose a stochastic model for the resistive switching of ReRAM devices with 1T1RPalabras claves:1T1R configuration, HfO -based memory 2, HfO2-based memory, Intrinsic parameters, Resistive random access memory (ReRAM), stochastic model, Switching probabilityAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStudy of the scaling and the temperature for RERAM cells using the QPC model
ArticleAbstract: This article describes the OXRAM cell operation for different areas and temperatures using the QuantPalabras claves:area scaling, HfO2, high-κ, QPC model, RERAM, TEMPERATURE, TinAutores:Laurent Raymond, Luis Miguel Procel Moya, Silvana Guitarra, Trojman L.Fuentes:googlescopusTFET and FinFET Hybrid Technologies for SRAM Cell: Performance Improvement over a Large VDD-Range
Conference ObjectAbstract: This work proposes and compares Static Random-Access Memory (SRAM) cells using hybrid technology forPalabras claves:CMOS, DELAY, FinFET, hybrid, power consumption, SRAM, Static Noise Margin, TFET, Write Noise MarginAutores:Adriana Arevalo, Liautard R., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusTemperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect-Centric perspective
Conference ObjectAbstract: In this work, we present an analysis to separate the interface states generation from the oxide trapPalabras claves:channel hot carrier degradation, defect centrict framework, interface states, Oxide trapsAutores:Crupi F., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusDC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO<inf>2</inf>-based resisPalabras claves:Hafnium oxide, low frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Procel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusDMTJ-Based Non-Volatile Ternary Content Addressable Memory for Energy-Efficient High-Performance Systems
Conference ObjectAbstract: This paper explores performance of non-volatile ternary content addressable memories (NV-TCAMs), expPalabras claves:Double-barrier magnetic tunnel junction, energy efficiency, Ternary content-addressable memoriesAutores:Kevin Vicuña, Luis Miguel Procel Moya, Ramiro Taco, Trojman L.Fuentes:googlescopus