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2015 AEIT International Annual Conference, AEIT 2015(1)
2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019(1)
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scopus(17)
Comparative analysis of yield optimized pulsed flip-flops
ArticleAbstract: In this paper, the influence of random process variations on pulsed flip-flops is analyzed. Monte CaPalabras claves:Autores:Corsonello P., Frustaci F., Marco Lanuzza, Perri S., Rose R.D.Fuentes:scopusAssessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework
ArticleAbstract: This paper deals with the technology scalability of spin-transfer torque magnetic RAMs (STT-MRAMs)baPalabras claves:Device-to-memory analysis, FinFET, Magnetic tunnel junction (MTJ), STT-MRAM, technology scalingAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusAssessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
ArticleAbstract: This paper explores non-volatile cache memories implemented by spin-transfer torque magnetic randomPalabras claves:cache memory, Device-to-system simulation framework, double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAMAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusAssessment of paper-based MoS<inf>2</inf> FET for Physically Unclonable Functions
ArticleAbstract: Two-dimensional (2D) materials are recognized as a promising beyond-CMOS technology thanks to theirPalabras claves:2d materials, Hardware security, Molybdenum disulfide (MoS ) 2, Paper electronics, physically unclonable function (PUF), Verilog-A modelAutores:Conti S., Crupi F., Iannaccone G., Magnone P., Marco Lanuzza, Rose R.D., Vatalaro M.Fuentes:scopusA comparative study of MWT architectures by means of numerical simulations
Conference ObjectAbstract: In order to improve the efficiency of c-Si and mc-Si solar cells, Metal Wrap Though (MWT) architectuPalabras claves:back contact, MWT, numerical simulation, Photovoltaics, Solar cell, VíaAutores:Crupi F., Fiegna C., Frei M., Magnone P., Marco Lanuzza, Rose R.D., Sangiorgi E., Tonini D.Fuentes:scopusA variation-aware simulation framework for hybrid CMOS/spintronic circuits
Conference ObjectAbstract: In this paper, a variation-aware simulation framework is introduced for hybrid circuits comprising MPalabras claves:device-circuit simulation, magnetic memory, Spintronic circuits, variationsAutores:Alioto M., Carpentieri M., Crupi F., Finocchio G., Marco Lanuzza, Rose R.D., Siracusano G., Tomasello R.Fuentes:scopusDevice-to-system level simulation framework for STT-DMTJ based cache memory
Conference ObjectAbstract: This paper presents a comparative study on non-volatile cache memories based on nanoscaled spin-tranPalabras claves:Device-to-system simulation framework, Double-barrier magnetic tunnel junction, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D.Fuentes:scopusDesign and evaluation of high-speed energy-aware carry skip adders
Conference ObjectAbstract: In this paper, the impact of different dynamic logic design styles is evaluated considering as benchPalabras claves:Autores:Frustaci F., Marco Lanuzza, Rose R.D.Fuentes:scopusDesigning dynamic carry skip adders: Analysis and comparison
ArticleAbstract: Addition represents an important operation that significantly impacts the performance of almost everPalabras claves:Carry skip adders, Dynamic circuitsAutores:Frustaci F., Marco Lanuzza, Purohit S., Rose R.D.Fuentes:scopusExploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications
ArticleAbstract: This paper evaluates the potential of spin-transfer torque magnetic random-access memories (STT-MRAMPalabras claves:77 K, cache memory, cold computing, Cryogenic, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A.Fuentes:scopus