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Applied Physics Letters(1)
Journal of Applied Physics(1)
Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009(1)
Technical Digest - International Electron Devices Meeting, IEDM(1)
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Física aplicada(4)
Electricidad y electrónica(1)
Ingeniería y operaciones afines(1)
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scopus(4)
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopusInfluence of ionized impurities in silicon nanowire MOS transistors
Conference ObjectAbstract: This study presents ionized impurity impacts on silicon nanowire MOS transistors. We first calculatePalabras claves:Green's function, Impurity, Modeling, Nanowire, Quantum transport, transistorAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusTheoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors
ArticleAbstract: Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we coPalabras claves:Autores:Bescond M., Cavassilas N., Dib E., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusThree-dimensional k p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
ArticleAbstract: We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This selPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopus