Mostrando 5 resultados de: 5
Publisher
2010 14th International Workshop on Computational Electronics, IWCE 2010(1)
Applied Physics Letters(1)
Journal of Applied Physics(1)
Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009(1)
Technical Digest - International Electron Devices Meeting, IEDM(1)
Área de conocimiento
Ingeniería electrónica(3)
Semiconductor(3)
Ciencia de materiales(2)
Simulación por computadora(2)
Mecánica cuántica(1)
Objetivos de Desarrollo Sostenible
ODS 8: Trabajo decente y crecimiento económico(5)
ODS 9: Industria, innovación e infraestructura(5)
Origen
scopus(5)
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopusInfluence of ionized impurities in silicon nanowire MOS transistors
Conference ObjectAbstract: This study presents ionized impurity impacts on silicon nanowire MOS transistors. We first calculatePalabras claves:Green's function, Impurity, Modeling, Nanowire, Quantum transport, transistorAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusSingle donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors
ArticleAbstract: This work presents a theoretical study of the influence of a single donor on the transport propertiePalabras claves:Autores:Bescond M., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusThree-dimensional k p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
ArticleAbstract: We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This selPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusThree-dimensional k.p quantum simulations of p-type nanowire MOS transistors: Influence of ionized impurity
Conference ObjectAbstract: We have developed a full three-dimensional real-space quantum transport simulator for p-type nanowirPalabras claves:Acceptor, Hole, Impurity, k.p method, Nanowire, Quantum, Resonant interferences, transportAutores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopus