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A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for pbkp_redicting the CHC bPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusDC and low-frequency noise behavior of the conductive filament in bipolar HfO<inf>2</inf>-based resistive random access memory
ArticleAbstract: This paper addresses the low frequency noise (LFN) properties of bipolar HfO2-based resistive randomPalabras claves:Hafnium oxide, Low-frequency noise, Non-volatile memory, Quantum point contact, Resistive RAMAutores:Crupi F., Goux L., Luis Miguel Prócel Moya, Maccaronio V., Miranda E., Simoen E., Trojman L.Fuentes:googlescopusDefect-centric distribution of channel hot carrier degradation in nano-MOSFETs
ArticleAbstract: The defect-centric distribution is used, for the first time, to study the channel hot carrier (CHC)Palabras claves:channel hot-carrier, defect-centric distribution, nFETAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusOn recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
ArticleAbstract: This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recesPalabras claves:AlGaN/GaN MOS-HEMT, Oxide traps, PBTI, Recessed gate, SiO 2Autores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Meneghesso G., Trojman L.Fuentes:googlescopusOrigins and implications of increased channel hot carrier variability in nFinFETs
Conference ObjectAbstract: Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeplPalabras claves:Bias Temperature Instability (BTI), Channel Hot Carriers (CHC), FinFETs, Time-Dependent VariabilityAutores:Bina M., Bury E., Chiarella T., Cho M., Crupi F., De Keersgieter A., Franco J., Grasser T., Groeseneken G., Horiguchi N., Ji Z., Kaczer B., Luis Miguel Prócel Moya, Pitner G., Putcha V., Roussel P.J., Thean A., Trojman L., Tyaginov S., Weckx P., Wimmer Y.Fuentes:googlescopusInfluence of GaN- and Si <inf>3</inf> N <inf>4</inf> -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
ArticleAbstract: This paper analyses the influence of the GaN and Si 3 N 4 passivation (or 'cap') layer on the top ofPalabras claves:activation energy, AlGaN/GaN Schottky diode, breakdown voltage, GaN cap, off-state, passivation layer, reliability, Si N cap 3 4Autores:Bakeroot B., Crupi F., De Jaeger B., Decoutere S., Eliana Acurio, Ronchi N., Trojman L.Fuentes:googlescopusImpact of AlN layer sandwiched between the GaN and the Al<inf>2</inf>O<inf>3</inf> layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
ArticleAbstract: This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with twoPalabras claves:Al O 2 3, BTI, GaN, MOS-HEMTsAutores:Crupi F., Eliana Acurio, Iucolano F., Magnone P., Trojman L.Fuentes:googlescopusImpact of the Emitter Contact Pattern in c-Si BC-BJ Solar Cells by Numerical Simulations
Conference ObjectAbstract: This paper presents a detailed analysis on the impact of the emitter contact geometry on the performPalabras claves:BC-BJ solar cells, Modeling, PhotovoItaics, Point contact, TCAD simulationAutores:Crupi F., Guerra N., Marco Guevara, Marco Lanuzza, Paul Procel, Rose R.D.Fuentes:googlescopusUnderstanding the Optimization of the Emitter Coverage in BC-BJ Solar Cells
Conference ObjectAbstract: In this work, by exploiting two-dimensional (2-D) TCAD numerical simulations, we performed a study oPalabras claves:back contact, back junction, BC-BJ, solar cells, TCADAutores:Cocorullo G., Crupi F., Guerra N., Maccaronio V., Marco Guevara, Paul ProcelFuentes:googlescopus