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Applied Physics Letters(2)
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18th International Workshop on Computational Electronics, IWCE 2015(1)
2010 14th International Workshop on Computational Electronics, IWCE 2010(1)
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scopus(10)
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusDynamical photo-induced electronic properties of molecular junctions
ArticleAbstract: Nanoscale molecular-electronic devices and machines are emerging as promising functional elements, nPalabras claves:Autores:Beltako K., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopusOriginal shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling
ArticleAbstract: This work presents original nanowire transistor architectures leading to device performance improvemPalabras claves:Autores:Bescond M., Cavassilas N., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusQuantum treatment of phonon scattering for modeling of three-dimensional atomistic transport
ArticleAbstract: Based on the nonequilibrium Green's function formalism, we show a numerically efficient method to trPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Lee Y., Logoteta D., Luisier M.Fuentes:scopusThe impact of lead geometry and discrete doping on NWFET operation
Conference ObjectAbstract: This work investigates the influence of discrete dopant positions and lead geometry on the contact rPalabras claves:Dielectrics, Doping, Geometry, Impurities, Logic gates, Semiconductor process modeling, siliconAutores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusTheoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors
ArticleAbstract: Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we coPalabras claves:Autores:Bescond M., Cavassilas N., Dib E., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusThree-dimensional k p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
ArticleAbstract: We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This selPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusThree-dimensional k.p quantum simulations of p-type nanowire MOS transistors: Influence of ionized impurity
Conference ObjectAbstract: We have developed a full three-dimensional real-space quantum transport simulator for p-type nanowirPalabras claves:Acceptor, Hole, Impurity, k.p method, Nanowire, Quantum, Resonant interferences, transportAutores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusTime-resolved quantum transport for optoelectronics
Conference ObjectAbstract: We investigate time-resolved energy currents in a molecular optoelectronic junction made of two donoPalabras claves:Autores:Beltako K., Bescond M., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopus