Mostrando 10 resultados de: 21
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Electronics (Switzerland)(3)
2016 IEEE International Engineering Summit, IE-Summit 2016(1)
2018 IEEE 3rd Ecuador Technical Chapters Meeting, ETCM 2018(1)
2019 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019(1)
2020 IEEE 11th Latin American Symposium on Circuits and Systems, LASCAS 2020(1)
Área temáticas
Ciencias de la computación(10)
Ingeniería y operaciones afines(2)
Instrumentos de precisión y otros dispositivos(2)
Métodos informáticos especiales(2)
Doctrinas(1)
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework
ArticleAbstract: This paper deals with the technology scalability of spin-transfer torque magnetic RAMs (STT-MRAMs)baPalabras claves:Device-to-memory analysis, FinFET, Magnetic tunnel junction (MTJ), STT-MRAM, technology scalingAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusAssessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
ArticleAbstract: This paper explores non-volatile cache memories implemented by spin-transfer torque magnetic randomPalabras claves:cache memory, Device-to-system simulation framework, double-barrier magnetic tunnel junction (DMTJ), FinFET, STT-MRAMAutores:Carpentieri M., Crupi F., Esteban Garzón, Finocchio G., Marco Lanuzza, Rose R.D., Trojman L.Fuentes:scopusA 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS
ArticleAbstract: In this brief, we present a fully-integrated ring-oscillator based CMOS temperature sensor for InterPalabras claves:CMOS-based temperature sensor, Low-power, Low-voltage, Real-time sensing, Ring oscillatorAutores:Benjamin Zambrano, Crupi F., Esteban Garzón, Marco Lanuzza, Strangio S.Fuentes:scopusA 0.6V-1.8V Compact Temperature Sensor with 0.24 °c Resolution, ±1.4 °c Inaccuracy and 1.06nJ per Conversion
ArticleAbstract: This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitPalabras claves:CMOS temperature sensor, Dynamic voltage and frequency scaling, Sub-threshold, Thermal monitoringAutores:Benjamin Zambrano, Esteban Garzón, Iannaccone G., Marco Lanuzza, Strangio S.Fuentes:scopusA RISC-V-based Research Platform for Rapid Design Cycle
Conference ObjectAbstract: This work proposes a novel platform for bringing a project from the concept to the tapeout stage inPalabras claves:Autores:Esteban Garzón, Golman R., Harel O., Kra Y., Marco Lanuzza, Noy T., Pollock A., Rudin Y., Shoshan Y., Teman A., Weitzman Y., Yuzhaninov S.Fuentes:scopusDevice-to-system level simulation framework for STT-DMTJ based cache memory
Conference ObjectAbstract: This paper presents a comparative study on non-volatile cache memories based on nanoscaled spin-tranPalabras claves:Device-to-system simulation framework, Double-barrier magnetic tunnel junction, STT-MRAMAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D.Fuentes:scopusCapacitance Extraction of 34-nm Metallurgical Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique
Conference ObjectAbstract: This paper presents the description and the results obtained with a new RFCV system written on pythoPalabras claves:Parameter Analyzer, PYTHON, RFCV, Source Measure Unit, Vector Network AnalyzerAutores:DIego R. Benalcázar, Esteban Garzón, Trojman L.Fuentes:scopusAdjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs
ArticleAbstract: This paper investigates the impact of thermal stability relaxation in double-barrier magnetic tunnelPalabras claves:77 K, Cryogenic cache, Cryogenic electronics, double-barrier magnetic tunnel junction (DMTJ), STT-MRAM, Thermal stability relaxationAutores:Crupi F., Esteban Garzón, Marco Lanuzza, Rose R.D., Teman A., Trojman L.Fuentes:scopusAll-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification
ArticleAbstract: We have designed a fully-integrated analog CMOS cognitive image sensor based on a two-layer artificiPalabras claves:Analog neural network, cognitive image sensor, neuromorphic engineeringAutores:Benjamin Zambrano, Esteban Garzón, Iannaccone G., Marco Lanuzza, Rizzo T., Strangio S.Fuentes:scopusGain-Cell Embedded DRAM under Cryogenic Operation-A First Study
ArticleAbstract: Operating circuits under cryogenic conditions is effective for a large spectrum of applications. HowPalabras claves:Cryogenic, data retention time (DRT), edge-direct tunneling, Embedded memory, gain-cell embedded DRAM (GC-eDRAM), subthreshold leakageAutores:Esteban Garzón, Greenblatt Y., Harel O., Marco Lanuzza, Teman A.Fuentes:scopus