Mostrando 10 resultados de: 27
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Publisher
European Physical Journal B(4)
Journal of Applied Physics(3)
Applied Physics Letters(2)
Physical Review B - Condensed Matter and Materials Physics(2)
Technical Digest - International Electron Devices Meeting, IEDM(2)
Área temáticas
Electricidad y electrónica(11)
Ingeniería y operaciones afines(6)
Ciencias de la computación(3)
Física(3)
Otras ramas de la ingeniería(2)
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopusAnalysis of the reset transition in bipolar HfO<inf>2</inf>-based ReRAM to improve modeling accuracy
Conference ObjectAbstract: A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-Palabras claves:conductive filament, filamentary conduction, RERAM, reset, stochastic model, Switching, two-step transitionAutores:Laurent Raymond, Martin Gavilanez, Silvana Guitarra, Trojman L.Fuentes:googlescopusAnomalous quantum Hall effect induced by disorder in topological insulators
ArticleAbstract: We investigate a transition between a two-dimensional topological insulator conduction state, characPalabras claves:Autores:Demion A., Laurent Raymond, Verga A.Fuentes:scopus3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
ArticleAbstract: We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transPalabras claves:Doping impurity, Green's function, Nanowire transistors, Quantum transport, SimulationAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO 2 -based Resistive Random AccesPalabras claves:active region, Model, percolation, RERAM, resistive switching, Simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusDielectric resonances in disordered media
ArticleAbstract: Binary disordered systems are usually obtained by mixing two ingbkp_redients in variable proportionsPalabras claves:Autores:Albinet G., Laugier J.M., Laurent Raymond, Schäfer S.Fuentes:scopusDielectric resonances in three-dimensional binary disordered media
ArticleAbstract: Powdered solids often present very specific properties due to their granular nature. Such powders arPalabras claves:61.43.Gt Powders, porous materials, 66.10.Ed Ionic conduction, 66.30.Dn Theory of diffusion and ionic conduction in solidsAutores:Albinet G., Laurent RaymondFuentes:scopusDielectric resonances of ordered passive arrays
ArticleAbstract: The electrical and optical properties of ordered passive arrays, constituted of inductive and capaciPalabras claves:Autores:Albinet G., Laurent Raymond, Schäfer S.Fuentes:scopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusGap narrowing in charged and doped silicon nanoclusters
ArticleAbstract: The gap narrowing in charged Si35 H36 and n -type doped Si34 D H36 (D=P, As, Sb, S, Se, and Te) clusPalabras claves:Autores:Kulatov E., Laurent Raymond, Michelini F., Titov A., Uspenskii Y.A.Fuentes:scopus