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720p-HD Gray-scale and Color Images Shape Recognition System Implementation on an FPGA Platform with a 1080pFull-HD HDMI Interface using a Hu Moments Algorithm
Conference ObjectAbstract: The present work implements and adapts a fast shape recognition algorithm on the Xilinx VC707 VIRTEXPalabras claves:ADV7511, Fpga, Full-HD, Gray Scale, HDL, HDMI, IIC, RGB, Shape recognitionAutores:André Borja, Daniel Cárdenas, Felipe Toscano, Luis Miguel Procel Moya, Ramiro Taco, Trojman L.Fuentes:scopusA 180 nm Low-Cost Operational Amplifier for IoT Applications
Conference ObjectAbstract: This paper presents the design and post-layout simulation of a two-stage operational amplifier (opamPalabras claves:cadence virtuoso, high performance, internet of things (IoT), LOW COST, miller compensation, operational amplifier, post-layout simulation, stabilityAutores:Ariana Musello, Cristhopher Mosquera, Kevin Vicuña, Luis Miguel Procel Moya, Marco Lanuzza, Mateo Rendón, Ramiro Taco, Trojman L.Fuentes:scopusA Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L.Fuentes:googlescopusA Defect-Centric perspective on channel hot carrier variability in nMOSFETs
ArticleAbstract: In this work we confirm the validity of the Defect-Centric distribution for predicting the CHC behavPalabras claves:channel hot carrier degradation, defect-centric distribution, variabilityAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Procel Moya, Trojman L., Tuinhout H., Wils N.Fuentes:googlescopusA low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks
ArticleAbstract: This paper presents a novel low-power low-voltage analog implementation of the softmax function, witPalabras claves:Activation functions, Deep Neural Networks, Machine Learning, SoftmaxAutores:Crupi F., Marco Lanuzza, Strangio S., Tatiana Moposita, Trojman L., Vatalaro M., Vladimirescu A.Fuentes:scopusA phenomenological model of the resistive switching for Hf-based ReRAM devices
Conference ObjectAbstract: This paper presents the current-voltage (I-V) characteristics of HfO <inf>2</inf> -based Resistive RPalabras claves:active region, model, percolation, RERAM, resistive switching, simulation, stochasticAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStatistical study of SiON short MOSFET under Channel Hot Carrier stress
Conference ObjectAbstract: In this work we study the threshold voltage variation (ΔV<inf>th</inf>) under a Channel Hot CarrierPalabras claves:channel hot carrier degradation, CMOS, defect generation SiON, Mobility, short channel device, StatisticAutores:Juan S. Acosta, Luis Miguel Procel Moya, Mario Ortega, Trojman L.Fuentes:scopusStochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices
ArticleAbstract: A compact model is proposed using a stochastic approach to capture the resistive switching behaviorPalabras claves:Conductive-bridge random access (CBRAM), Polyethylene oxide (PEO), stochastic model, Switching probabilityAutores:Deleruyelle D., Laurent Raymond, Mahato P., Silvana Guitarra, Trojman L.Fuentes:googlescopusStochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration
ArticleAbstract: In this paper, we propose a stochastic model for the resistive switching of ReRAM devices with 1T1RPalabras claves:1T1R configuration, HfO -based memory 2, HfO2-based memory, Intrinsic parameters, Resistive random access memory (ReRAM), stochastic model, Switching probabilityAutores:Laurent Raymond, Silvana Guitarra, Trojman L.Fuentes:googlescopusStudy of the scaling and the temperature for RERAM cells using the QPC model
ArticleAbstract: This article describes the OXRAM cell operation for different areas and temperatures using the QuantPalabras claves:area scaling, HfO2, high-κ, QPC model, RERAM, TEMPERATURE, TinAutores:Laurent Raymond, Luis Miguel Procel Moya, Silvana Guitarra, Trojman L.Fuentes:googlescopus