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Proceedings of the 2016 IEEE ANDESCON, ANDESCON 2016(3)
IEEE Latin America Transactions(1)
IEEE Transactions on Device and Materials Reliability(1)
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs
ArticleAbstract: The defect-centric distribution is used to study the temperature dependence of channel hot carrier (Palabras claves:channel hot carrier degradation, defect-centric distribution, temperature analysisAutores:Crupi F., Franco J., Kaczer B., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopusRemote control of VNA and parameter analyzer for RFCV measurements using Python
Conference ObjectAbstract: This paper presents the development of capacitance measurement with RF signal (RFCV) for MOSFET. SucPalabras claves:IEEE 488.2, MOSFET, Network Analyzer, PYTHON, RFCV, SCPI, SMU, VNAAutores:Esteban Garzón, Fernando Sanchez, Luis Miguel Prócel Moya, Trojman L.Fuentes:scopusStatistical study of SiON short MOSFET under Channel Hot Carrier stress
Conference ObjectAbstract: In this work we study the threshold voltage variation (ΔVth) under a Channel Hot Carrier stress usinPalabras claves:channel hot carrier degradation, CMOS, defect generation SiON, mobility, short channel device, StatisticAutores:Juan S. Acosta, Luis Miguel Prócel Moya, Mario Ortega, Trojman L.Fuentes:scopusStudy of the scaling and the temperature for RERAM cells using the QPC model
ArticleAbstract: This article describes the OXRAM cell operation for different areas and temperatures using the QuantPalabras claves:area scaling, HfO2, high-κ, QPC model, RERAM, TEMPERATURE, TinAutores:Laurent Raymond, Luis Miguel Prócel Moya, Silvana Guitarra, Trojman L.Fuentes:googlescopusTemperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect-Centric perspective
Conference ObjectAbstract: In this work, we present an analysis to separate the interface states generation from the oxide trapPalabras claves:channel hot carrier degradation, defect centrict framework, interface states, Oxide trapsAutores:Crupi F., Luis Miguel Prócel Moya, Trojman L.Fuentes:googlescopus