Mostrando 10 resultados de: 12
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Publisher
Journal of Applied Physics(3)
Applied Physics Letters(2)
Technical Digest - International Electron Devices Meeting, IEDM(2)
18th International Workshop on Computational Electronics, IWCE 2015(1)
2010 14th International Workshop on Computational Electronics, IWCE 2010(1)
Área temáticas
Física aplicada(11)
Electricidad y electrónica(3)
Ingeniería y operaciones afines(2)
Otras ramas de la ingeniería(2)
Física(1)
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopus3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
ArticleAbstract: We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transPalabras claves:Doping impurity, Green's function, Nanowire transistors, Quantum transport, SimulationAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusOriginal shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling
ArticleAbstract: This work presents original nanowire transistor architectures leading to device performance improvemPalabras claves:Autores:Bescond M., Cavassilas N., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusInfluence of ionized impurities in silicon nanowire MOS transistors
Conference ObjectAbstract: This study presents ionized impurity impacts on silicon nanowire MOS transistors. We first calculatePalabras claves:Green's function, Impurity, Modeling, Nanowire, Quantum transport, transistorAutores:Bescond M., Lannoo M., Laurent Raymond, Michelini F., Pala M.Fuentes:scopusSingle donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors
ArticleAbstract: This work presents a theoretical study of the influence of a single donor on the transport propertiePalabras claves:Autores:Bescond M., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusQuantum treatment of phonon scattering for modeling of three-dimensional atomistic transport
ArticleAbstract: Based on the nonequilibrium Green's function formalism, we show a numerically efficient method to trPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Lee Y., Logoteta D., Luisier M.Fuentes:scopusThe impact of lead geometry and discrete doping on NWFET operation
Conference ObjectAbstract: This work investigates the influence of discrete dopant positions and lead geometry on the contact rPalabras claves:Dielectrics, Doping, Geometry, Impurities, Logic gates, Semiconductor process modeling, siliconAutores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusTheoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors
ArticleAbstract: Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we coPalabras claves:Autores:Bescond M., Cavassilas N., Dib E., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusThree-dimensional k p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
ArticleAbstract: We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This selPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopus