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Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
Conference ObjectAbstract: The influence of various channel materials and crystallographic orientations on the performance of nPalabras claves:Autores:Asenov A., Autran J.L., Bescond M., Cavassilas N., Kalna K., Lannoo M., Laurent Raymond, Nehari K.Fuentes:scopusCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
ArticleAbstract: This work theoretically studies the influence of both the geometry and the discrete nature of dopantPalabras claves:Autores:Berrada S., Bescond M., Cavassilas N., Lannoo M., Laurent RaymondFuentes:scopusDynamical photo-induced electronic properties of molecular junctions
ArticleAbstract: Nanoscale molecular-electronic devices and machines are emerging as promising functional elements, nPalabras claves:Autores:Beltako K., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopusElectronic and magnetic properties of semiconducting nanoclusters and large organic molecules: Features interesting for spintronics
Conference ObjectAbstract: Spin properties of single-doped and single-electron charged nano-systems having an odd number of elePalabras claves:Metal phthalocyanine, Nanocluster, SpintronicAutores:Kulatov E., Laurent Raymond, Michelini F., Tikhonov E., Titov A., Uspenskii Y.A.Fuentes:scopusSingle donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors
ArticleAbstract: This work presents a theoretical study of the influence of a single donor on the transport propertiePalabras claves:Autores:Bescond M., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusStochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices
ArticleAbstract: A compact model is proposed using a stochastic approach to capture the resistive switching behaviorPalabras claves:Conductive-bridge random access (CBRAM), Polyethylene oxide (PEO), stochastic model, Switching probabilityAutores:Deleruyelle D., Laurent Raymond, Mahato P., Silvana Guitarra, Trojman L.Fuentes:googlescopusStudy of the scaling and the temperature for RERAM cells using the QPC model
ArticleAbstract: This article describes the OXRAM cell operation for different areas and temperatures using the QuantPalabras claves:area scaling, HfO2, high-κ, QPC model, RERAM, TEMPERATURE, TinAutores:Laurent Raymond, Luis Miguel Procel Moya, Silvana Guitarra, Trojman L.Fuentes:googlescopusTheoretical comparison of Si, Ge, and GaAs ultrathin p-type double-gate metal oxide semiconductor transistors
ArticleAbstract: Based on a self-consistent multi-band quantum transport code including hole-phonon scattering, we coPalabras claves:Autores:Bescond M., Cavassilas N., Dib E., Lannoo M., Laurent Raymond, Michelini F.Fuentes:scopusThree-dimensional k p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities
ArticleAbstract: We present a three-dimensional quantum transport simulator for p-type nanowire transistors. This selPalabras claves:Autores:Bescond M., Cavassilas N., Lannoo M., Laurent Raymond, Michelini F., Pons N.Fuentes:scopusTime-resolved quantum transport for optoelectronics
Conference ObjectAbstract: We investigate time-resolved energy currents in a molecular optoelectronic junction made of two donoPalabras claves:Autores:Beltako K., Bescond M., Cavassilas N., Laurent Raymond, Michelini F.Fuentes:scopus