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scopus(20)
Analysis of sound propagation for outdoor emergency speakers networks
Conference ObjectAbstract: In this work we show the results of analysis of propagation of sound waves applied for an alert systPalabras claves:Autores:Guillermo Rafael-Valdivia, Paucar-Curasma R., Rosas-Bermejo E.Fuentes:scopusDevice level model for trapping effects in GaN and GaAs devices for broadband data communication
Conference ObjectAbstract: In this work, we propose a new non-linear equivalent circuit which is able to model the low frequencPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Mendoza T., Su Z., Urquizo A.Fuentes:scopusDesign of a Doherty Power Amplifier with GaN Technology in the Sub-6 GHz Band for 5G Applications with Harmonic Suppression
Conference ObjectAbstract: This paper shows the methodology for the design of a Doherty Power Amplifier (DPA), based on a wellPalabras claves:Doherty amplifier, GaN, Harmonic suppression, ModelingAutores:Aruquipa-Callata L., Guillermo Rafael-ValdiviaFuentes:scopusNew drain current model for MESFET/HEMT devices based on pulsed measurements
Conference ObjectAbstract: In this work, a new ids current equation and FET model are proposed based on DC and pulsed I/V measuPalabras claves:Circuit modeling, FET circuits, MESFETs, Microwave devices, pulsed measurements, Scattering parameter measurementAutores:Brady R., Brazil T.J., Guillermo Rafael-ValdiviaFuentes:scopusNew technique for the implementation of nonlinear models for microwave transistors for broadband data communication
Conference ObjectAbstract: A new way to implement nonlinear models for microwave transistors is shown. It allows conventional dPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Su Z.Fuentes:scopusNon Linear Modeling for the Frequency Dispersive Effects and Electronic Mobility on Microwave Transistors
Conference ObjectAbstract: Differences between static and dynamic behavior of microwave transistors have been studied through dPalabras claves:electronic mobility, GAAS, GaN, Intermodulation distortion, Microwave transistors, Modeling, non linear equivalent circuitsAutores:Guillermo Rafael-ValdiviaFuentes:scopusNon-linear model for microwave transistors including low-frequency dispersion and memory effects
Conference ObjectAbstract: A new methodology for the extraction of nonlinear models for microwave transistors is proposed. A unPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, O. CastellanosFuentes:scopusNon-linear modeling for low and high power microwave transistors.
Conference ObjectAbstract: An improved way to implement nonlinear models for microwave transistors is shown for GaAs, GaN and LPalabras claves:Device level modeling, GAAS, GaN, LDMOS, Microwave transistors, pulsed measurements, Trapping effectsAutores:Guillermo Rafael-Valdivia, Su Z.Fuentes:scopusNonlinear current source model for a GaAs transistor implemented in Verilog-A using pulsed measurements
Conference ObjectAbstract: A Verilog-A model for a GaAs MESFET was implemented and validated. A modified nonlinear equation forPalabras claves:compact model, FETs, pulsed measurements, Verilog-aAutores:Fraquet M.A., Guillermo Rafael-ValdiviaFuentes:scopusNonlinear device model for GaN and GaAs microwave transistors including memory effects
Conference ObjectAbstract: In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique canPalabras claves:FET, GAAS, GaN, memory effects, Microwave devices, Modeling, pulsed measurements, Scattering parametersAutores:Barbin S., Guillermo Rafael-Valdivia, Mendoza T., Urquizo A.Fuentes:scopus