Mostrando 9 resultados de: 9
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IEEE MTT-S International Microwave Symposium Digest(2)
2014 IEEE Latin-America Conference on Communications, IEEE LATINCOM 2014(1)
2015 IEEE MTT-S International Microwave Symposium, IMS 2015(1)
2018 IEEE MTT-S Latin America Microwave Conference, LAMC 2018 - Proceedings(1)
2019 49th European Microwave Conference, EuMC 2019(1)
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Ingeniería electrónica(9)
Ciencia de materiales(2)
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Semiconductor(1)
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scopus(9)
Device level model for trapping effects in GaN and GaAs devices for broadband data communication
Conference ObjectAbstract: In this work, we propose a new non-linear equivalent circuit which is able to model the low frequencPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Mendoza T., Su Z., Urquizo A.Fuentes:scopusNew drain current model for MESFET/HEMT devices based on pulsed measurements
Conference ObjectAbstract: In this work, a new ids current equation and FET model are proposed based on DC and pulsed I/V measuPalabras claves:Circuit modeling, FET circuits, MESFETs, Microwave devices, pulsed measurements, Scattering parameter measurementAutores:Brady R., Brazil T.J., Guillermo Rafael-ValdiviaFuentes:scopusNew technique for the implementation of nonlinear models for microwave transistors for broadband data communication
Conference ObjectAbstract: A new way to implement nonlinear models for microwave transistors is shown. It allows conventional dPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Su Z.Fuentes:scopusNon-linear model for microwave transistors including low-frequency dispersion and memory effects
Conference ObjectAbstract: A new methodology for the extraction of nonlinear models for microwave transistors is proposed. A unPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, O. CastellanosFuentes:scopusNonlinear device model for GaN and GaAs microwave transistors including memory effects
Conference ObjectAbstract: In this paper, a new technique for modeling GaN and GaAs transistors is presented. The technique canPalabras claves:FET, GAAS, GaN, memory effects, Microwave devices, Modeling, pulsed measurements, Scattering parametersAutores:Barbin S., Guillermo Rafael-Valdivia, Mendoza T., Urquizo A.Fuentes:scopusMethodology for modelling, design and implementation of RF power amplifiers based on pulsed measurements
Conference ObjectAbstract: This work presents a new methodology for modelling, design and implementation of power amplifiers inPalabras claves:Circuit modelling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, O. CastellanosFuentes:scopusMicrowave Transistor Model Including Electronic Mobility Pbkp_rediction
Conference ObjectAbstract: This work presents a methodology for modeling microwave transistors in different technologies. As rePalabras claves:Circuit modeling, FETs, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-ValdiviaFuentes:scopusModeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
Conference ObjectAbstract: A novel technique for modeling GaN and GaAs transistors for data communications is proposed. The tecPalabras claves:Circuit modeling, FETs, memory effects, Microwave devices, pulsed measurements, Scattering parametersAutores:Guillermo Rafael-Valdivia, Mendoza T., Su Z., Urquizo A.Fuentes:scopusSingle function drain current model for MESFET/HEMT devices including pulsed dynamic behavior
Conference ObjectAbstract: A new approach to modeling the dynamic behavior of microwave devices based on pulsed measurements, iPalabras claves:Circuit modeling, FETs, Microwave devices, pulsed measurements, Scattering parametersAutores:Brady R., Brazil T.J., Guillermo Rafael-ValdiviaFuentes:scopus